Green light emission from InGaN multiple quantum wells grown on GaN pyramidal stripes using selective area epitaxy

W. Feng, V. V. Kuryatkov, A. Chandolu, D. Y. Song, M. Pandikunta, S. A. Nikishin, M. Holtz

Research output: Contribution to journalArticle

32 Scopus citations

Abstract

Selective area epitaxy has been used to grow pyramidal GaN stripes, followed by InGaN multiple quantum well (MQW) structures, in order to produce long-wavelength green light emission. Stripes oriented along 〈 11 2- 0 〉 produce smooth { 1 1- 01 } sidewall facets. The roomerature optical properties are investigated by cathodoluminescence spectroscopy using a scanning electron microscope. MQWs grown in unmasked reference regions exhibit emission at 450 nm. The stripe sidewalls emit light with peak wavelength of 500 nm with consistent linewidth and intensity. The stripe ridge emits light with peak intensity at wavelength of ∼550 nm. Based on the spatial extent of the 550 nm emission, the ridge is estimated to be ∼250 nm wide. The large redshift is produced by the enhanced presence of indium species due to lateral vapor diffusion and surface migration in selective area epitaxy.

Original languageEnglish
Article number103530
JournalJournal of Applied Physics
Volume104
Issue number10
DOIs
StatePublished - 2008

Fingerprint Dive into the research topics of 'Green light emission from InGaN multiple quantum wells grown on GaN pyramidal stripes using selective area epitaxy'. Together they form a unique fingerprint.

  • Cite this