TY - JOUR
T1 - Ge related-defect energy and microcavity effect in GaN epitaxial layer
AU - Zhao, Yi Guang
AU - Cheng, Lei
AU - Huang, Xian Ling
AU - Zhang, Guo Yi
AU - Li, Jing
AU - Yang, Zhi Jian
PY - 1998
Y1 - 1998
N2 - Using solid-phase regrowth technique, Pd/Ge contact has been made on the GaN layer, and very good ohmic behavior was observed for the contact. The Photolumincscence (PL) spectra for different structures formed by the Pd/Ge contact, GaN layer, sapphire substrate, and mirror were studied, and a defect-assisted transition was found at 450 nm related to Ge impurity. The results show that the microcavity effect strongly influences the PL spectra of the band-gap and defect-assisted transitions.
AB - Using solid-phase regrowth technique, Pd/Ge contact has been made on the GaN layer, and very good ohmic behavior was observed for the contact. The Photolumincscence (PL) spectra for different structures formed by the Pd/Ge contact, GaN layer, sapphire substrate, and mirror were studied, and a defect-assisted transition was found at 450 nm related to Ge impurity. The results show that the microcavity effect strongly influences the PL spectra of the band-gap and defect-assisted transitions.
UR - http://www.scopus.com/inward/record.url?scp=0032348348&partnerID=8YFLogxK
U2 - 10.1088/0256-307X/15/9/018
DO - 10.1088/0256-307X/15/9/018
M3 - Article
AN - SCOPUS:0032348348
SN - 0256-307X
VL - 15
SP - 674
EP - 676
JO - Chinese Physics Letters
JF - Chinese Physics Letters
IS - 9
ER -