Ge related-defect energy and microcavity effect in GaN epitaxial layer

Yi Guang Zhao, Lei Cheng, Xian Ling Huang, Guo Yi Zhang, Jing Li, Zhi Jian Yang

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

Using solid-phase regrowth technique, Pd/Ge contact has been made on the GaN layer, and very good ohmic behavior was observed for the contact. The Photolumincscence (PL) spectra for different structures formed by the Pd/Ge contact, GaN layer, sapphire substrate, and mirror were studied, and a defect-assisted transition was found at 450 nm related to Ge impurity. The results show that the microcavity effect strongly influences the PL spectra of the band-gap and defect-assisted transitions.

Original languageEnglish
Pages (from-to)674-676
Number of pages3
JournalChinese Physics Letters
Volume15
Issue number9
DOIs
StatePublished - 1998

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