Ge epilayer of high quality on a Si substrate by solid-phase epitaxy

W. S. Liu, J. S. Chen, D. Y.C. Lie, M. A. Nicolet

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An epitaxial Ge layer is grown by solid-phase epitaxy on an underlying Ge0.82Si0.18 seeding layer with a Ge-SiO2 matrix positioned between them. To this end, a (100)Si substrate with a Ge 0.82Si0.18 epilayer is first oxidized in a wet ambient at 700°C for 30 min to transform an upper fraction of the epilayer to amorphous Ge0.82Si0.18O2. A second annealing step (700°C/16 h) in a 95% N2+5% H2 ambient (forming gas) reduces the GeO2 to Ge which grows epitaxially by solid-phase reaction on the remaining Ge0.82Si0.18 layer. A self-induced intermediate layer of epitaxial Ge with SiO2 inclusions restricts the propagation of dislocations, resulting in a crystalline perfection of the overlying Ge epilayer superior to that of the Ge0.82Si 0.18 template.

Original languageEnglish
Pages (from-to)1405-1407
Number of pages3
JournalApplied Physics Letters
Issue number10
StatePublished - 1993


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