Gas source molecular beam epitaxy of high quality AlxGa1-xN (0≤x≤1) on Si(111)

S. Nikishin, G. Kipshidze, V. Kuryatkov, K. Choi, Iu Gherasoiu, L. Grave De Peralta, A. Zubrilov, V. Tretyakov, K. Copeland, T. Prokofyeva, M. Holtz, R. Asomoza, Yu Kudryavtsev, H. Temkin

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