An overview is given on growth procedures resulting in high quality AlGaN on Si substrates. Gas source molecular beam epitaxy (MBE) growth under stoichiometric conditions allowed to control electrical properties of layers and structures. Light emitting diodes based on GaN on Si operate at low currents and forward voltage.
|Number of pages||4|
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|State||Published - Jul 2001|
|Event||19th North American Conference on Molecular Beam Epitaxy (NAMBE-19) - Tempe, AZ, United States|
Duration: Oct 15 2000 → Oct 18 2000