Gas source molecular beam epitaxy of high quality AlxGa1-xN (0≤x≤1) on Si(111)

S. Nikishin, G. Kipshidze, V. Kuryatkov, K. Choi, Iu Gherasoiu, L. Grave De Peralta, A. Zubrilov, V. Tretyakov, K. Copeland, T. Prokofyeva, M. Holtz, R. Asomoza, Yu Kudryavtsev, H. Temkin

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25 Scopus citations


An overview is given on growth procedures resulting in high quality AlGaN on Si substrates. Gas source molecular beam epitaxy (MBE) growth under stoichiometric conditions allowed to control electrical properties of layers and structures. Light emitting diodes based on GaN on Si operate at low currents and forward voltage.

Original languageEnglish
Pages (from-to)1409-1412
Number of pages4
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Issue number4
StatePublished - Jul 2001
Event19th North American Conference on Molecular Beam Epitaxy (NAMBE-19) - Tempe, AZ, United States
Duration: Oct 15 2000Oct 18 2000


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