Gas source molecular beam epitaxy of high quality AlGaN on Si and sapphire

S. Nikishin, G. Kipshidze, V. Kuryatkov, A. Zubrilov, K. Choi, Iu Gherasoiu, L. Grave De Peralta, T. Prokofyeva, M. Holtz, R. Asomoza, Yu Kudryavtsev, H. Temkin

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