TY - JOUR
T1 - Gas source molecular beam epitaxy of high quality AlGaN on Si and sapphire
AU - Nikishin, S.
AU - Kipshidze, G.
AU - Kuryatkov, V.
AU - Zubrilov, A.
AU - Choi, K.
AU - Gherasoiu, Iu
AU - Grave De Peralta, L.
AU - Prokofyeva, T.
AU - Holtz, M.
AU - Asomoza, R.
AU - Kudryavtsev, Yu
AU - Temkin, H.
N1 - Funding Information:
Work at TTU was supported by DARPA, NSF (ECS-0070240), J. F Maddox Foundation, and SBCCOM. Work at CINVESTAV was supported by Conacyt, Mexico (grant 31106-U).
PY - 2001
Y1 - 2001
N2 - We report the results of epitaxial growth experiments on AlxGa1-xN (0≤ x ≤ 1) on Si(111) and sapphire substrates aimed at understanding the origin and elimination of cracking. We describe growth procedures resulting in thick layers of AlxGa1-xN, grown by gas source molecular beam epitaxy with ammonia, that are free of cracks. In GaN layers with the thickness of ∼2.5 μm, we find the background electron concentration of (1-2)×1016 cm-3 and mobility of (800±100) cm2/Vs. In AlxGa1-xN (0.2 < x < 0.6) with the film thickness of 0.5-0.7 μm the electron concentration of (2-3)×1016 cm-3 is obtained. Low background concentrations in GaN allow for formation of p-n junctions by doping with Mg. Light emitting diodes with the peak emission at 380 nm have been demonstrated.
AB - We report the results of epitaxial growth experiments on AlxGa1-xN (0≤ x ≤ 1) on Si(111) and sapphire substrates aimed at understanding the origin and elimination of cracking. We describe growth procedures resulting in thick layers of AlxGa1-xN, grown by gas source molecular beam epitaxy with ammonia, that are free of cracks. In GaN layers with the thickness of ∼2.5 μm, we find the background electron concentration of (1-2)×1016 cm-3 and mobility of (800±100) cm2/Vs. In AlxGa1-xN (0.2 < x < 0.6) with the film thickness of 0.5-0.7 μm the electron concentration of (2-3)×1016 cm-3 is obtained. Low background concentrations in GaN allow for formation of p-n junctions by doping with Mg. Light emitting diodes with the peak emission at 380 nm have been demonstrated.
UR - http://www.scopus.com/inward/record.url?scp=0035557669&partnerID=8YFLogxK
M3 - Conference article
AN - SCOPUS:0035557669
VL - 639
SP - G11.37.1-G11.37.6
JO - Materials Research Society Symposium - Proceedings
JF - Materials Research Society Symposium - Proceedings
SN - 0272-9172
Y2 - 27 November 2000 through 1 December 2000
ER -