Gas source molecular beam epitaxy of high quality AlGaN on Si and sapphire

S. Nikishin; G. Kipshidze; V. Kuryatkov; A. Zubrilov; K. Choi; Iu Gherasoiu; L. Grave De Peralta; T. Prokofyeva; M. Holtz; R. Asomoza; Yu Kudryavtsev; H. Temkin

Gas source molecular beam epitaxy of high quality AlGaN on Si and sapphire

S. Nikishin, G. Kipshidze, V. Kuryatkov, A. Zubrilov, K. Choi, Iu Gherasoiu, L. Grave De Peralta, T. Prokofyeva, M. Holtz, R. Asomoza, Yu Kudryavtsev, H. Temkin

Research output: Contribution to journal › Conference article › peer-review

5 Scopus citations

Abstract

We report the results of epitaxial growth experiments on Al_xGa_1-xN (0≤ x ≤ 1) on Si(111) and sapphire substrates aimed at understanding the origin and elimination of cracking. We describe growth procedures resulting in thick layers of Al_xGa_1-xN, grown by gas source molecular beam epitaxy with ammonia, that are free of cracks. In GaN layers with the thickness of ∼2.5 μm, we find the background electron concentration of (1-2)×10¹⁶ cm^-3 and mobility of (800±100) cm²/Vs. In Al_xGa_1-xN (0.2 < x < 0.6) with the film thickness of 0.5-0.7 μm the electron concentration of (2-3)×10¹⁶ cm^-3 is obtained. Low background concentrations in GaN allow for formation of p-n junctions by doping with Mg. Light emitting diodes with the peak emission at 380 nm have been demonstrated.

Original language	English
Pages (from-to)	G11.37.1-G11.37.6
Journal	Materials Research Society Symposium - Proceedings
Volume	639
State	Published - 2001
Event	GaN and Related Alloys 2000 - Boston, MA, United States Duration: Nov 27 2000 → Dec 1 2000

Cite this

@article{01e07be67ff34ae29cc6fe0637594ee3,

title = "Gas source molecular beam epitaxy of high quality AlGaN on Si and sapphire",

abstract = "We report the results of epitaxial growth experiments on AlxGa1-xN (0≤ x ≤ 1) on Si(111) and sapphire substrates aimed at understanding the origin and elimination of cracking. We describe growth procedures resulting in thick layers of AlxGa1-xN, grown by gas source molecular beam epitaxy with ammonia, that are free of cracks. In GaN layers with the thickness of ∼2.5 μm, we find the background electron concentration of (1-2)×1016 cm-3 and mobility of (800±100) cm2/Vs. In AlxGa1-xN (0.2 < x < 0.6) with the film thickness of 0.5-0.7 μm the electron concentration of (2-3)×1016 cm-3 is obtained. Low background concentrations in GaN allow for formation of p-n junctions by doping with Mg. Light emitting diodes with the peak emission at 380 nm have been demonstrated.",

author = "S. Nikishin and G. Kipshidze and V. Kuryatkov and A. Zubrilov and K. Choi and Iu Gherasoiu and {Grave De Peralta}, L. and T. Prokofyeva and M. Holtz and R. Asomoza and Yu Kudryavtsev and H. Temkin",

note = "Funding Information: Work at TTU was supported by DARPA, NSF (ECS-0070240), J. F Maddox Foundation, and SBCCOM. Work at CINVESTAV was supported by Conacyt, Mexico (grant 31106-U).; null ; Conference date: 27-11-2000 Through 01-12-2000",

year = "2001",

language = "English",

volume = "639",

pages = "G11.37.1--G11.37.6",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

}

Gas source molecular beam epitaxy of high quality AlGaN on Si and sapphire. / Nikishin, S.; Kipshidze, G.; Kuryatkov, V.; Zubrilov, A.; Choi, K.; Gherasoiu, Iu; Grave De Peralta, L.; Prokofyeva, T.; Holtz, M.; Asomoza, R.; Kudryavtsev, Yu; Temkin, H.

In: Materials Research Society Symposium - Proceedings, Vol. 639, 2001, p. G11.37.1-G11.37.6.

Research output: Contribution to journal › Conference article › peer-review

TY - JOUR

T1 - Gas source molecular beam epitaxy of high quality AlGaN on Si and sapphire

AU - Nikishin, S.

AU - Kipshidze, G.

AU - Kuryatkov, V.

AU - Zubrilov, A.

AU - Choi, K.

AU - Gherasoiu, Iu

AU - Grave De Peralta, L.

AU - Prokofyeva, T.

AU - Holtz, M.

AU - Asomoza, R.

AU - Kudryavtsev, Yu

AU - Temkin, H.

N1 - Funding Information: Work at TTU was supported by DARPA, NSF (ECS-0070240), J. F Maddox Foundation, and SBCCOM. Work at CINVESTAV was supported by Conacyt, Mexico (grant 31106-U).

PY - 2001

Y1 - 2001

N2 - We report the results of epitaxial growth experiments on AlxGa1-xN (0≤ x ≤ 1) on Si(111) and sapphire substrates aimed at understanding the origin and elimination of cracking. We describe growth procedures resulting in thick layers of AlxGa1-xN, grown by gas source molecular beam epitaxy with ammonia, that are free of cracks. In GaN layers with the thickness of ∼2.5 μm, we find the background electron concentration of (1-2)×1016 cm-3 and mobility of (800±100) cm2/Vs. In AlxGa1-xN (0.2 < x < 0.6) with the film thickness of 0.5-0.7 μm the electron concentration of (2-3)×1016 cm-3 is obtained. Low background concentrations in GaN allow for formation of p-n junctions by doping with Mg. Light emitting diodes with the peak emission at 380 nm have been demonstrated.

AB - We report the results of epitaxial growth experiments on AlxGa1-xN (0≤ x ≤ 1) on Si(111) and sapphire substrates aimed at understanding the origin and elimination of cracking. We describe growth procedures resulting in thick layers of AlxGa1-xN, grown by gas source molecular beam epitaxy with ammonia, that are free of cracks. In GaN layers with the thickness of ∼2.5 μm, we find the background electron concentration of (1-2)×1016 cm-3 and mobility of (800±100) cm2/Vs. In AlxGa1-xN (0.2 < x < 0.6) with the film thickness of 0.5-0.7 μm the electron concentration of (2-3)×1016 cm-3 is obtained. Low background concentrations in GaN allow for formation of p-n junctions by doping with Mg. Light emitting diodes with the peak emission at 380 nm have been demonstrated.

UR - http://www.scopus.com/inward/record.url?scp=0035557669&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0035557669

VL - 639

SP - G11.37.1-G11.37.6

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

SN - 0272-9172

Y2 - 27 November 2000 through 1 December 2000

ER -

Gas source molecular beam epitaxy of high quality AlGaN on Si and sapphire

Abstract

Other files and links

Fingerprint

Cite this