Gas source molecular beam epitaxy of high quality AlGaN on Si and sapphire

S. Nikishin, G. Kipshidze, V. Kuryatkov, A. Zubrilov, K. Choi, Iu Gherasoiu, L. Grave De Peralta, T. Prokofyeva, M. Holtz, R. Asomoza, Yu Kudryavtsev, H. Temkin

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We report the results of epitaxial growth experiments on AlxGa1-xN (0≤ x ≤ 1) on Si(111) and sapphire substrates aimed at understanding the origin and elimination of cracking. We describe growth procedures resulting in thick layers of AlxGa1-xN, grown by gas source molecular beam epitaxy with ammonia, that are free of cracks. In GaN layers with the thickness of ∼2.5 μm, we find the background electron concentration of (1-2)×1016 cm-3 and mobility of (800±100) cm2/Vs. In AlxGa1-xN (0.2 < x < 0.6) with the film thickness of 0.5-0.7 μm the electron concentration of (2-3)×1016 cm-3 is obtained. Low background concentrations in GaN allow for formation of p-n junctions by doping with Mg. Light emitting diodes with the peak emission at 380 nm have been demonstrated.

Original languageEnglish
Pages (from-to)G11.37.1-G11.37.6
JournalMaterials Research Society Symposium - Proceedings
StatePublished - 2001
EventGaN and Related Alloys 2000 - Boston, MA, United States
Duration: Nov 27 2000Dec 1 2000


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