Gas source molecular beam epitaxy of GaN with hydrazine on spinel substrates

S. A. Nikishin, H. Temkin, V. G. Antipov, A. I. Guriev, A. S. Zubrilov, V. A. Elyukhin, N. N. Faleev, R. N. Kyutt, A. K. Chin

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Abstract

Growth of high quality wurtzite-structure GaN layers on (111) MgAl2O4 by gas source molecular beam epitaxy is described. Hydrazine was used as a source of active nitrogen. In situ reflection high energy electron diffraction was used to monitor the growth mode. Two-dimensional growth was obtained at temperatures above 750°C on multi-step GaN buffer layers. The resulting GaN films show excellent luminescence properties.

Original languageEnglish
Pages (from-to)2361-2363
Number of pages3
JournalApplied Physics Letters
Volume72
Issue number19
DOIs
StatePublished - 1998

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    Nikishin, S. A., Temkin, H., Antipov, V. G., Guriev, A. I., Zubrilov, A. S., Elyukhin, V. A., Faleev, N. N., Kyutt, R. N., & Chin, A. K. (1998). Gas source molecular beam epitaxy of GaN with hydrazine on spinel substrates. Applied Physics Letters, 72(19), 2361-2363. https://doi.org/10.1063/1.121357