GaN/GaAs(111)B grown by molecular beam epitaxy using hydrazine

V. G. Antipov, A. I. Guriev, V. A. Elyukhin, N. N. Faleev, Yu A. Kudriavtsev, A. B. Lebedev, T. V. Shubina, A. S. Zubrilov, S. A. Nikishin, H. Temkin

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Layers of hexagonal GaN were grown on (111)B GaAs substrates by gas source molecular beam epitaxy (GSMBE) using hydrazine as a source of active nitrogen. Nitridation of an AlAs buffer layer was shown to produce a flat layer of AlN. GaN films grown on the AlN surface at growth temperatures above 700°C exhibited quasi two-dimensional growth. Photoluminescence spectra of such GaN layers show narrow band-edge emission and no "yellow" defect band.

Original languageEnglish
Title of host publicationProceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997
EditorsMike Melloch, Mark A. Reed
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages15-23
Number of pages9
ISBN (Print)0780338839, 9780780338838
DOIs
StatePublished - 1997
Event24th IEEE International Symposium on Compound Semiconductors, ISCS 1997 - San Diego, United States
Duration: Sep 8 1997Sep 11 1997

Publication series

NameProceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997

Conference

Conference24th IEEE International Symposium on Compound Semiconductors, ISCS 1997
CountryUnited States
CitySan Diego
Period09/8/9709/11/97

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  • Cite this

    Antipov, V. G., Guriev, A. I., Elyukhin, V. A., Faleev, N. N., Kudriavtsev, Y. A., Lebedev, A. B., Shubina, T. V., Zubrilov, A. S., Nikishin, S. A., & Temkin, H. (1997). GaN/GaAs(111)B grown by molecular beam epitaxy using hydrazine. In M. Melloch, & M. A. Reed (Eds.), Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997 (pp. 15-23). [711533] (Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISCS.1998.711533