GaN/GaAs(111)B grown by molecular beam epitaxy using hydrazine

V. G. Antipov; A. I. Guriev; V. A. Elyukhin; N. N. Faleev; Yu A. Kudriavtsev; A. B. Lebedev; T. V. Shubina; A. S. Zubrilov; S. A. Nikishin; H. Temkin

doi:10.1109/ISCS.1998.711533

GaN/GaAs(111)B grown by molecular beam epitaxy using hydrazine

V. G. Antipov, A. I. Guriev, V. A. Elyukhin, N. N. Faleev, Yu A. Kudriavtsev, A. B. Lebedev, T. V. Shubina, A. S. Zubrilov, S. A. Nikishin, H. Temkin

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Layers of hexagonal GaN were grown on (111)B GaAs substrates by gas source molecular beam epitaxy (GSMBE) using hydrazine as a source of active nitrogen. Nitridation of an AlAs buffer layer was shown to produce a flat layer of AlN. GaN films grown on the AlN surface at growth temperatures above 700°C exhibited quasi two-dimensional growth. Photoluminescence spectra of such GaN layers show narrow band-edge emission and no "yellow" defect band.

Original language	English
Title of host publication	Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997
Editors	Mike Melloch, Mark A. Reed
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	15-23
Number of pages	9
ISBN (Print)	0780338839, 9780780338838
DOIs	https://doi.org/10.1109/ISCS.1998.711533
State	Published - 1997
Event	24th IEEE International Symposium on Compound Semiconductors, ISCS 1997 - San Diego, United States Duration: Sep 8 1997 → Sep 11 1997

Publication series

Name	Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997

Conference

Conference	24th IEEE International Symposium on Compound Semiconductors, ISCS 1997
Country/Territory	United States
City	San Diego
Period	09/8/97 → 09/11/97

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10.1109/ISCS.1998.711533

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Antipov, V. G., Guriev, A. I., Elyukhin, V. A., Faleev, N. N., Kudriavtsev, Y. A., Lebedev, A. B., Shubina, T. V., Zubrilov, A. S., Nikishin, S. A., & Temkin, H. (1997). GaN/GaAs(111)B grown by molecular beam epitaxy using hydrazine. In M. Melloch, & M. A. Reed (Eds.), Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997 (pp. 15-23). Article 711533 (Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISCS.1998.711533

Antipov, V. G. ; Guriev, A. I. ; Elyukhin, V. A. et al. / GaN/GaAs(111)B grown by molecular beam epitaxy using hydrazine. Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997. editor / Mike Melloch ; Mark A. Reed. Institute of Electrical and Electronics Engineers Inc., 1997. pp. 15-23 (Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997).

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title = "GaN/GaAs(111)B grown by molecular beam epitaxy using hydrazine",

abstract = "Layers of hexagonal GaN were grown on (111)B GaAs substrates by gas source molecular beam epitaxy (GSMBE) using hydrazine as a source of active nitrogen. Nitridation of an AlAs buffer layer was shown to produce a flat layer of AlN. GaN films grown on the AlN surface at growth temperatures above 700°C exhibited quasi two-dimensional growth. Photoluminescence spectra of such GaN layers show narrow band-edge emission and no {"}yellow{"} defect band.",

author = "Antipov, {V. G.} and Guriev, {A. I.} and Elyukhin, {V. A.} and Faleev, {N. N.} and Kudriavtsev, {Yu A.} and Lebedev, {A. B.} and Shubina, {T. V.} and Zubrilov, {A. S.} and Nikishin, {S. A.} and H. Temkin",

note = "Publisher Copyright: {\textcopyright} 1998 IEEE.; 24th IEEE International Symposium on Compound Semiconductors, ISCS 1997 ; Conference date: 08-09-1997 Through 11-09-1997",

year = "1997",

doi = "10.1109/ISCS.1998.711533",

language = "English",

isbn = "0780338839",

series = "Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "15--23",

editor = "Mike Melloch and Reed, {Mark A.}",

booktitle = "Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997",

}

Antipov, VG, Guriev, AI, Elyukhin, VA, Faleev, NN, Kudriavtsev, YA, Lebedev, AB, Shubina, TV, Zubrilov, AS, Nikishin, SA & Temkin, H 1997, GaN/GaAs(111)B grown by molecular beam epitaxy using hydrazine. in M Melloch & MA Reed (eds), Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997., 711533, Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997, Institute of Electrical and Electronics Engineers Inc., pp. 15-23, 24th IEEE International Symposium on Compound Semiconductors, ISCS 1997, San Diego, United States, 09/8/97. https://doi.org/10.1109/ISCS.1998.711533

GaN/GaAs(111)B grown by molecular beam epitaxy using hydrazine. / Antipov, V. G.; Guriev, A. I.; Elyukhin, V. A. et al.
Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997. ed. / Mike Melloch; Mark A. Reed. Institute of Electrical and Electronics Engineers Inc., 1997. p. 15-23 711533 (Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - GaN/GaAs(111)B grown by molecular beam epitaxy using hydrazine

AU - Antipov, V. G.

AU - Guriev, A. I.

AU - Elyukhin, V. A.

AU - Faleev, N. N.

AU - Kudriavtsev, Yu A.

AU - Lebedev, A. B.

AU - Shubina, T. V.

AU - Zubrilov, A. S.

AU - Nikishin, S. A.

AU - Temkin, H.

PY - 1997

Y1 - 1997

N2 - Layers of hexagonal GaN were grown on (111)B GaAs substrates by gas source molecular beam epitaxy (GSMBE) using hydrazine as a source of active nitrogen. Nitridation of an AlAs buffer layer was shown to produce a flat layer of AlN. GaN films grown on the AlN surface at growth temperatures above 700°C exhibited quasi two-dimensional growth. Photoluminescence spectra of such GaN layers show narrow band-edge emission and no "yellow" defect band.

AB - Layers of hexagonal GaN were grown on (111)B GaAs substrates by gas source molecular beam epitaxy (GSMBE) using hydrazine as a source of active nitrogen. Nitridation of an AlAs buffer layer was shown to produce a flat layer of AlN. GaN films grown on the AlN surface at growth temperatures above 700°C exhibited quasi two-dimensional growth. Photoluminescence spectra of such GaN layers show narrow band-edge emission and no "yellow" defect band.

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T3 - Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997

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PB - Institute of Electrical and Electronics Engineers Inc.

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Y2 - 8 September 1997 through 11 September 1997

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Antipov VG, Guriev AI, Elyukhin VA, Faleev NN, Kudriavtsev YA, Lebedev AB et al. GaN/GaAs(111)B grown by molecular beam epitaxy using hydrazine. In Melloch M, Reed MA, editors, Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997. Institute of Electrical and Electronics Engineers Inc. 1997. p. 15-23. 711533. (Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997). doi: 10.1109/ISCS.1998.711533

GaN/GaAs(111)B grown by molecular beam epitaxy using hydrazine

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