TY - JOUR
T1 - GaN Technology for Power Electronic Applications
T2 - A Review
AU - Flack, Tyler J.
AU - Pushpakaran, Bejoy N.
AU - Bayne, Stephen B.
N1 - Publisher Copyright:
© 2016, The Minerals, Metals & Materials Society.
PY - 2016/6/1
Y1 - 2016/6/1
N2 - Power semiconductor devices based on silicon (Si) are quickly approaching their limits, set by fundamental material properties. In order to address these limitations, new materials for use in devices must be investigated. Wide bandgap materials, such as silicon carbide (SiC) and gallium nitride (GaN) have suitable properties for power electronic applications; however, fabrication of practical devices from these materials may be challenging. SiC technology has matured to point of commercialized devices, whereas GaN requires further research to realize full material potential. This review covers fundamental material properties of GaN as they relate to Si and SiC. This is followed by a discussion of the contemporary issues involved with bulk GaN substrates and their fabrication and a brief overview of how devices are fabricated, both on native GaN substrate material and non-native substrate material. An overview of current device structures, which are being analyzed for use in power switching applications, is then provided; both vertical and lateral device structures are considered. Finally, a brief discussion of prototypes currently employing GaN devices is given.
AB - Power semiconductor devices based on silicon (Si) are quickly approaching their limits, set by fundamental material properties. In order to address these limitations, new materials for use in devices must be investigated. Wide bandgap materials, such as silicon carbide (SiC) and gallium nitride (GaN) have suitable properties for power electronic applications; however, fabrication of practical devices from these materials may be challenging. SiC technology has matured to point of commercialized devices, whereas GaN requires further research to realize full material potential. This review covers fundamental material properties of GaN as they relate to Si and SiC. This is followed by a discussion of the contemporary issues involved with bulk GaN substrates and their fabrication and a brief overview of how devices are fabricated, both on native GaN substrate material and non-native substrate material. An overview of current device structures, which are being analyzed for use in power switching applications, is then provided; both vertical and lateral device structures are considered. Finally, a brief discussion of prototypes currently employing GaN devices is given.
KW - Gallium nitride (GaN)
KW - power electronics
KW - power semiconductors
UR - http://www.scopus.com/inward/record.url?scp=84960413251&partnerID=8YFLogxK
U2 - 10.1007/s11664-016-4435-3
DO - 10.1007/s11664-016-4435-3
M3 - Review article
AN - SCOPUS:84960413251
SN - 0361-5235
VL - 45
SP - 2673
EP - 2682
JO - Journal of Electronic Materials
JF - Journal of Electronic Materials
IS - 6
ER -