GaN microdisk light emitting diodes

S. X. Jin; J. Li; J. Z. Li; J. Y. Lin; H. X. Jiang

doi:10.1063/1.125841

GaN microdisk light emitting diodes

S. X. Jin, J. Li, J. Z. Li, J. Y. Lin, H. X. Jiang

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

185 Scopus citations

Abstract

Microdisk light-emitting diodes (μ-LEDs) with diameter of about 12 μm have been fabricated from InGaN/GaN quantum wells. Photolithographic patterning and inductively coupled plasma dry etching have been employed to fabricate these μ-LED devices. Device characteristics, such as the current-voltage characteristics, light output power, and electroluminescence (EL) spectra have been measured and compared with those of conventional broad-area LEDs. Our results showed that, for an identical area, the quantum efficiencies of μ-LED are enhanced over the conventional broad-area LEDs due to an enhanced current density and possibly microsize effects. The implications of our results on the design of future UV/blue microoptoelectronic devices are discussed.

Original language	English
Pages (from-to)	631-633
Number of pages	3
Journal	Applied Physics Letters
Volume	76
Issue number	5
DOIs	https://doi.org/10.1063/1.125841
State	Published - Jan 31 2000

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@article{fb973da297c5496d8308becbfec725c4,

title = "GaN microdisk light emitting diodes",

abstract = "Microdisk light-emitting diodes (μ-LEDs) with diameter of about 12 μm have been fabricated from InGaN/GaN quantum wells. Photolithographic patterning and inductively coupled plasma dry etching have been employed to fabricate these μ-LED devices. Device characteristics, such as the current-voltage characteristics, light output power, and electroluminescence (EL) spectra have been measured and compared with those of conventional broad-area LEDs. Our results showed that, for an identical area, the quantum efficiencies of μ-LED are enhanced over the conventional broad-area LEDs due to an enhanced current density and possibly microsize effects. The implications of our results on the design of future UV/blue microoptoelectronic devices are discussed.",

author = "Jin, {S. X.} and J. Li and Li, {J. Z.} and Lin, {J. Y.} and Jiang, {H. X.}",

year = "2000",

month = jan,

day = "31",

doi = "10.1063/1.125841",

language = "English",

volume = "76",

pages = "631--633",

journal = "Applied Physics Letters",

issn = "0003-6951",

number = "5",

}

TY - JOUR

T1 - GaN microdisk light emitting diodes

AU - Jin, S. X.

AU - Li, J.

AU - Li, J. Z.

AU - Lin, J. Y.

AU - Jiang, H. X.

PY - 2000/1/31

Y1 - 2000/1/31

N2 - Microdisk light-emitting diodes (μ-LEDs) with diameter of about 12 μm have been fabricated from InGaN/GaN quantum wells. Photolithographic patterning and inductively coupled plasma dry etching have been employed to fabricate these μ-LED devices. Device characteristics, such as the current-voltage characteristics, light output power, and electroluminescence (EL) spectra have been measured and compared with those of conventional broad-area LEDs. Our results showed that, for an identical area, the quantum efficiencies of μ-LED are enhanced over the conventional broad-area LEDs due to an enhanced current density and possibly microsize effects. The implications of our results on the design of future UV/blue microoptoelectronic devices are discussed.

AB - Microdisk light-emitting diodes (μ-LEDs) with diameter of about 12 μm have been fabricated from InGaN/GaN quantum wells. Photolithographic patterning and inductively coupled plasma dry etching have been employed to fabricate these μ-LED devices. Device characteristics, such as the current-voltage characteristics, light output power, and electroluminescence (EL) spectra have been measured and compared with those of conventional broad-area LEDs. Our results showed that, for an identical area, the quantum efficiencies of μ-LED are enhanced over the conventional broad-area LEDs due to an enhanced current density and possibly microsize effects. The implications of our results on the design of future UV/blue microoptoelectronic devices are discussed.

UR - http://www.scopus.com/inward/record.url?scp=0000869693&partnerID=8YFLogxK

U2 - 10.1063/1.125841

DO - 10.1063/1.125841

M3 - Article

AN - SCOPUS:0000869693

SN - 0003-6951

VL - 76

SP - 631

EP - 633

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 5

ER -

GaN microdisk light emitting diodes

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