GaN microdisk light emitting diodes

S. X. Jin, J. Li, J. Z. Li, J. Y. Lin, H. X. Jiang

Research output: Contribution to journalArticle

126 Scopus citations

Abstract

Microdisk light-emitting diodes (μ-LEDs) with diameter of about 12 μm have been fabricated from InGaN/GaN quantum wells. Photolithographic patterning and inductively coupled plasma dry etching have been employed to fabricate these μ-LED devices. Device characteristics, such as the current-voltage characteristics, light output power, and electroluminescence (EL) spectra have been measured and compared with those of conventional broad-area LEDs. Our results showed that, for an identical area, the quantum efficiencies of μ-LED are enhanced over the conventional broad-area LEDs due to an enhanced current density and possibly microsize effects. The implications of our results on the design of future UV/blue microoptoelectronic devices are discussed.

Original languageEnglish
Pages (from-to)631-633
Number of pages3
JournalApplied Physics Letters
Volume76
Issue number5
DOIs
StatePublished - Jan 31 2000

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