GaN light-emitting triodes for high-efficiency hole injection

Jong Kyu Kim, E. Fred Schubert, Jaehee Cho, Cheolsoo Sone, J. Y. Lin, H. X. Jiang, J. M. Zavada

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

A new type of light-emitting device, the light-emitting triode (LET) is demonstrated to have enhanced hole-injection efficiency. The LET has an additional anode to accelerate carriers in the lateral direction by means of an electric field between the two anodes. Theoretical calculations reveal that the lateral electric field provides additional energy to carriers, thereby allowing them to overcome barriers and increasing the carrier injection efficiency into the active region. It is experimentally shown that the light-output power of the LET increases with increasing negative bias to the additional anode, which is fully consistent with the expectation.

Original languageEnglish
Article number014608JES
Pages (from-to)G734-G737
JournalJournal of the Electrochemical Society
Volume153
Issue number8
DOIs
StatePublished - Aug 2006

Fingerprint Dive into the research topics of 'GaN light-emitting triodes for high-efficiency hole injection'. Together they form a unique fingerprint.

Cite this