Abstract
A study of GaN-based waveguide devices for long-wavelength optical communication was presented. The refractive indices of AlxGa1-xN with different Al concentrations were measured. Single-mode ridged optical waveguide devices were designed, fabricated, and characterized using GaN/AlGaN heterostructures. The feasibility of developing photonic integrated circuits for fiber-optical communications based on III-nitride wide-band-gap semiconductors was discussed.
Original language | English |
---|---|
Pages (from-to) | 1326-1328 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 82 |
Issue number | 9 |
DOIs | |
State | Published - Mar 3 2003 |