Abstract
Repetitive pulsed-power generators with nanosecond rise times and multi-kilovolt outputs commonly employ silicon MOSFET switches. Gallium arsenide FET switches hold the promise of faster operation, higher voltage hold-off, and greater current densities. The realization of this promise requires an understanding of the physical and practical limits of Si- and GaAs-based devices. In this paper, the results of ATLAS simulations on a Si MOSFET and on a GaAs SIT are presented. The results show that GaAs-based devices are superior to those based on Si in terms of switching speeds and power dissipation, but that they have a relatively higher leakage current.
| Original language | English |
|---|---|
| Pages (from-to) | 437-440 |
| Number of pages | 4 |
| Journal | IEEE Conference Record of Power Modulator Symposium |
| State | Published - 2002 |
| Event | Conference Record of the Twenty-Fifth International Power Modulator Symposium and 2002 High-Voltage Workshop - Hollywood, CA, United States Duration: Jun 30 2002 → Jul 3 2002 |