Full-scale self-emissive blue and green microdisplays based on GaN micro-LED arrays

J. Day, J. Li, D. Y.C. Lie, C. Bradford, J. Y. Lin, H. X. Jiang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

14 Scopus citations

Abstract

Micro-size light emitting diode (μLED) arrays based on III-nitride semiconductors have emerged as a promising technology for a wide range of applications. If InGaN μLED arrays can be integrated on to Si complementary metal-oxide-semiconductor (CMOS) substrates for active driving, these devices could play crucial roles in ultra-portable products such as next generation pico-projectors, as well as in emerging fields such as biophotonics and optogenetics. Here we present a demonstration of, and methods for, creating a highresolution solid-state self-emissive microdisplay based on InGaN/GaN semiconductors. An energy efficient active drive scheme is accomplished by integrating micro-emitter arrays with CMOS active matrix drivers that are flip-chip bonded together via indium metal bumps.

Original languageEnglish
Title of host publicationQuantum Sensing and Nanophotonic Devices IX
DOIs
StatePublished - 2012
EventQuantum Sensing and Nanophotonic Devices IX - San Francisco, CA, United States
Duration: Jan 22 2012Jan 26 2012

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume8268
ISSN (Print)0277-786X

Conference

ConferenceQuantum Sensing and Nanophotonic Devices IX
CountryUnited States
CitySan Francisco, CA
Period01/22/1201/26/12

Keywords

  • III-V and CMOS integration
  • III-nitride wide bandgap semiconductors
  • Solid-state microdisplays
  • active drive
  • flip-chip bonding
  • micro-LED array
  • self-emissive displays

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