Free nucleation of aluminum nitride single crystals in HPBN crucible by sublimation

B. Liu; J. H. Edgar; B. Raghothamachar; M. Dudley; J. Y. Lin; H. X. Jiang; A. Sarua; M. Kuball

doi:10.1016/j.mseb.2004.10.009

Free nucleation of aluminum nitride single crystals in HPBN crucible by sublimation

B. Liu, J. H. Edgar, B. Raghothamachar, M. Dudley, J. Y. Lin, H. X. Jiang, A. Sarua, M. Kuball

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

Clear and colorless aluminum nitride (AlN) single crystal thin platelets up to 60 mm² were prepared at 2100 °C and 800 Torr in hot-pressed boron nitride (HPBN) crucibles by free nucleation in a graphite furnace. Crystals grown in HPBN crucibles typically form thin platelets with the fastest growth rate (above 400 μm/h) occurring in the c-axis direction. Growth striations frequently run the length of the crystals, probably due to the presence of boron in the growth environment. Raman spectra and X-ray topography reveal that the crystals have good structural quality. Emissions peaks around 4.10 eV, 3.90 eV, and 3.70 eV were observed in the photoluminescence spectrum, suggesting that boron from the boron nitride crucible may incorporate into the AlN crystals as hexagonal boron nitride.

Original language	English
Pages (from-to)	99-104
Number of pages	6
Journal	Materials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume	117
Issue number	1
DOIs	https://doi.org/10.1016/j.mseb.2004.10.009
State	Published - Feb 25 2005

Keywords

Aluminum nitride
Boron nitride
Crystallization
Sublimation

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10.1016/j.mseb.2004.10.009

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title = "Free nucleation of aluminum nitride single crystals in HPBN crucible by sublimation",

abstract = "Clear and colorless aluminum nitride (AlN) single crystal thin platelets up to 60 mm2 were prepared at 2100 °C and 800 Torr in hot-pressed boron nitride (HPBN) crucibles by free nucleation in a graphite furnace. Crystals grown in HPBN crucibles typically form thin platelets with the fastest growth rate (above 400 μm/h) occurring in the c-axis direction. Growth striations frequently run the length of the crystals, probably due to the presence of boron in the growth environment. Raman spectra and X-ray topography reveal that the crystals have good structural quality. Emissions peaks around 4.10 eV, 3.90 eV, and 3.70 eV were observed in the photoluminescence spectrum, suggesting that boron from the boron nitride crucible may incorporate into the AlN crystals as hexagonal boron nitride.",

keywords = "Aluminum nitride, Boron nitride, Crystallization, Sublimation",

author = "B. Liu and Edgar, {J. H.} and B. Raghothamachar and M. Dudley and Lin, {J. Y.} and Jiang, {H. X.} and A. Sarua and M. Kuball",

note = "Funding Information: Support from the Office of Naval Research from award No. N00014-02-1-0290 is greatly appreciated. We extend our gratitude to J. Chaudhuri for the TEM micrograph. ",

year = "2005",

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doi = "10.1016/j.mseb.2004.10.009",

language = "English",

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AU - Liu, B.

AU - Edgar, J. H.

AU - Raghothamachar, B.

AU - Dudley, M.

AU - Lin, J. Y.

AU - Jiang, H. X.

AU - Sarua, A.

AU - Kuball, M.

N1 - Funding Information: Support from the Office of Naval Research from award No. N00014-02-1-0290 is greatly appreciated. We extend our gratitude to J. Chaudhuri for the TEM micrograph.

PY - 2005/2/25

Y1 - 2005/2/25

N2 - Clear and colorless aluminum nitride (AlN) single crystal thin platelets up to 60 mm2 were prepared at 2100 °C and 800 Torr in hot-pressed boron nitride (HPBN) crucibles by free nucleation in a graphite furnace. Crystals grown in HPBN crucibles typically form thin platelets with the fastest growth rate (above 400 μm/h) occurring in the c-axis direction. Growth striations frequently run the length of the crystals, probably due to the presence of boron in the growth environment. Raman spectra and X-ray topography reveal that the crystals have good structural quality. Emissions peaks around 4.10 eV, 3.90 eV, and 3.70 eV were observed in the photoluminescence spectrum, suggesting that boron from the boron nitride crucible may incorporate into the AlN crystals as hexagonal boron nitride.

AB - Clear and colorless aluminum nitride (AlN) single crystal thin platelets up to 60 mm2 were prepared at 2100 °C and 800 Torr in hot-pressed boron nitride (HPBN) crucibles by free nucleation in a graphite furnace. Crystals grown in HPBN crucibles typically form thin platelets with the fastest growth rate (above 400 μm/h) occurring in the c-axis direction. Growth striations frequently run the length of the crystals, probably due to the presence of boron in the growth environment. Raman spectra and X-ray topography reveal that the crystals have good structural quality. Emissions peaks around 4.10 eV, 3.90 eV, and 3.70 eV were observed in the photoluminescence spectrum, suggesting that boron from the boron nitride crucible may incorporate into the AlN crystals as hexagonal boron nitride.

KW - Aluminum nitride

KW - Boron nitride

KW - Crystallization

KW - Sublimation

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M3 - Article

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SN - 0921-5107

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JO - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

JF - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

IS - 1

ER -

Free nucleation of aluminum nitride single crystals in HPBN crucible by sublimation

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Keywords

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