The charged controlled model is presented as an effective method to simulate junction barrier schottky (JBS) silicon carbide diodes. Proven as a valuable approach for silicon devices, this model can also account for wide bandgap energy semiconductors. The model was implemented in Orcad's SPICE software package using analog behavioral modelling. The simulation combines the efficiency of a traditional static model with an improved charge controlled model representing transient characteristics of the semiconductor due to stored charge in the depletion layer. The result is an enhanced model that simulates in short period of time. Parameter extraction methods are used to help identify saturation currents, capacitance, resistance, voltages, and modelling coefficients. The simulation results in a close fit to the data taken during reverse recovery of a JBS SiC diode.
|Number of pages||4|
|Journal||Conference Record of the International Power Modulator Symposium and High Voltage Workshop|
|State||Published - 2004|
|Event||2004 IEEE International Power Modulator Conference: 26th International Power Modulator Symposium and 2004 High Voltage Workshop - San Francisco, CA, United States|
Duration: May 23 2004 → May 26 2004