Formation of VNH and MgV NH in p-type GaN(Mg,H)

A. F. Wright; S. M. Myers; M. Sanati; S. K. Estreicher

doi:10.1016/j.physb.2005.12.122

Formation of V_NH and MgV _NH in p-type GaN(Mg,H)

A. F. Wright, S. M. Myers, M. Sanati, S. K. Estreicher

Physics

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

The reactions VN+1+H+→(VNH)+2 and (MgVN)0+H+→(MgVNH)+1 in GaN were investigated using density-functional theory. Estimates of the reaction rates indicate that (VNH)+2 and (MgVNH)+1 will form rapidly above 400°C, and modeling predicts that their populations will be substantial at elevated temperatures. These results indicate that compensation by VN is important in p-type GaN and that H suppression of VN formation is less effective than previously suggested.

Original language	English
Pages (from-to)	477-481
Number of pages	5
Journal	Physica B: Condensed Matter
Volume	376-377
Issue number	1
DOIs	https://doi.org/10.1016/j.physb.2005.12.122
State	Published - Apr 1 2006
Event	Proceedings of the 23rd International Conference on Defects in Semiconductors - Duration: Jul 24 2005 → Jul 29 2005

Keywords

Gallium nitride
Hydrogen
Magnesium doping
Nitrogen vacancy

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10.1016/j.physb.2005.12.122

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title = "Formation of VNH and MgV NH in p-type GaN(Mg,H)",

abstract = "The reactions VN+1+H+→(VNH)+2 and (MgVN)0+H+→(MgVNH)+1 in GaN were investigated using density-functional theory. Estimates of the reaction rates indicate that (VNH)+2 and (MgVNH)+1 will form rapidly above 400°C, and modeling predicts that their populations will be substantial at elevated temperatures. These results indicate that compensation by VN is important in p-type GaN and that H suppression of VN formation is less effective than previously suggested.",

keywords = "Gallium nitride, Hydrogen, Magnesium doping, Nitrogen vacancy",

author = "Wright, {A. F.} and Myers, {S. M.} and M. Sanati and Estreicher, {S. K.}",

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TY - JOUR

T1 - Formation of VNH and MgV NH in p-type GaN(Mg,H)

AU - Wright, A. F.

AU - Myers, S. M.

AU - Sanati, M.

AU - Estreicher, S. K.

PY - 2006/4/1

Y1 - 2006/4/1

N2 - The reactions VN+1+H+→(VNH)+2 and (MgVN)0+H+→(MgVNH)+1 in GaN were investigated using density-functional theory. Estimates of the reaction rates indicate that (VNH)+2 and (MgVNH)+1 will form rapidly above 400°C, and modeling predicts that their populations will be substantial at elevated temperatures. These results indicate that compensation by VN is important in p-type GaN and that H suppression of VN formation is less effective than previously suggested.

AB - The reactions VN+1+H+→(VNH)+2 and (MgVN)0+H+→(MgVNH)+1 in GaN were investigated using density-functional theory. Estimates of the reaction rates indicate that (VNH)+2 and (MgVNH)+1 will form rapidly above 400°C, and modeling predicts that their populations will be substantial at elevated temperatures. These results indicate that compensation by VN is important in p-type GaN and that H suppression of VN formation is less effective than previously suggested.

KW - Gallium nitride

KW - Hydrogen

KW - Magnesium doping

KW - Nitrogen vacancy

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U2 - 10.1016/j.physb.2005.12.122

DO - 10.1016/j.physb.2005.12.122

M3 - Conference article

AN - SCOPUS:33645163654

VL - 376-377

SP - 477

EP - 481

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

SN - 0921-4526

IS - 1

Y2 - 24 July 2005 through 29 July 2005

ER -