Formation of VNH and MgV NH in p-type GaN(Mg,H)

A. F. Wright, S. M. Myers, M. Sanati, S. K. Estreicher

Research output: Contribution to journalConference articlepeer-review

1 Scopus citations

Abstract

The reactions VN+1+H+→(VNH)+2 and (MgVN)0+H+→(MgVNH)+1 in GaN were investigated using density-functional theory. Estimates of the reaction rates indicate that (VNH)+2 and (MgVNH)+1 will form rapidly above 400°C, and modeling predicts that their populations will be substantial at elevated temperatures. These results indicate that compensation by VN is important in p-type GaN and that H suppression of VN formation is less effective than previously suggested.

Original languageEnglish
Pages (from-to)477-481
Number of pages5
JournalPhysica B: Condensed Matter
Volume376-377
Issue number1
DOIs
StatePublished - Apr 1 2006
EventProceedings of the 23rd International Conference on Defects in Semiconductors -
Duration: Jul 24 2005Jul 29 2005

Keywords

  • Gallium nitride
  • Hydrogen
  • Magnesium doping
  • Nitrogen vacancy

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