Abstract
The reactions VN+1+H+→(VNH)+2 and (MgVN)0+H+→(MgVNH)+1 in GaN were investigated using density-functional theory. Estimates of the reaction rates indicate that (VNH)+2 and (MgVNH)+1 will form rapidly above 400°C, and modeling predicts that their populations will be substantial at elevated temperatures. These results indicate that compensation by VN is important in p-type GaN and that H suppression of VN formation is less effective than previously suggested.
Original language | English |
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Pages (from-to) | 477-481 |
Number of pages | 5 |
Journal | Physica B: Condensed Matter |
Volume | 376-377 |
Issue number | 1 |
DOIs | |
State | Published - Apr 1 2006 |
Event | Proceedings of the 23rd International Conference on Defects in Semiconductors - Duration: Jul 24 2005 → Jul 29 2005 |
Keywords
- Gallium nitride
- Hydrogen
- Magnesium doping
- Nitrogen vacancy