Formation of nickel nanodots on GaN

D. Aurongzeb, K. Bhargava Ram, M. Holtz, M. Basavaraj, G. Kipshidze, B. Yavich, S. A. Nikishin, H. Temkin

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8 Scopus citations


We examine the annealing-induced formation of nickel nanodots on GaN substrates. The initial Ni layer thickness is 2 nm. Annealing temperatures range from 550 to 930 °C. The islands are well defined at the highest temperatures. Island formation kinetics provide an activation energy of 0.34±0.07 eV. Time dependence of the nanodot island areas, annealed at 750 °C, is consistent with a t23. These observations are indicative of diffusion-limited ripening as the primary formation mechanism. X-ray diffraction results show that nickel gallides form at anneal temperatures 750 °C and above.

Original languageEnglish
Article number014308
JournalJournal of Applied Physics
Issue number1
StatePublished - 2006


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