Two sharp bands at ∼1350 and ∼1600 cm-1 were observed in the Raman spectra of carbon-implanted GaN after postimplantation annealing treatments. The intensities of these two bands increased while their full widths at half maximum decreased with increasing annealing temperature. The observation of these two bands indicates the formation of microcrystalline graphite in C-implanted GaN. Hall measurements demonstrated that some dispersed C in GaN acted as acceptors and played a role in reducing electron concentration and Hall mobility. The facts that in 1100°C furnace annealing the intensities of these two Raman peaks decreased rapidly to zero and the resistivity increased by 3 orders of magnitude indicate the dissolution of microcrystalline graphite at this temperature.