Field-induced non-equilibrium electron transport in an In 0.4Ga0.6N epilayer grown on GaN studied by subpicosecond raman spectroscopy

W. Liang; K. T. Tsen; D. K. Ferry; K. H. Kim; J. Y. Lin; H. X. Jiang

doi:10.1088/0268-1242/19/4/140

Field-induced non-equilibrium electron transport in an In _0.4Ga_0.6N epilayer grown on GaN studied by subpicosecond raman spectroscopy

W. Liang, K. T. Tsen, D. K. Ferry, K. H. Kim, J. Y. Lin, H. X. Jiang

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

Field-induced electron transport in an In_xGa_1-xN (x ≅ 0.4) sample grown on GaN has been studied by subpicosecond Raman spectroscopy. Non-equilibrium electron distribution and electron drift velocity due to the presence of piezoelectric and spontaneous fields in the In _xGa_1-xN layer have been directly measured. The experimental results are compared with ensemble Monte Carlo calculations and reasonable agreements are obtained.

Original language	English
Pages (from-to)	S427-S429
Journal	Semiconductor Science and Technology
Volume	19
Issue number	4 SPEC. ISS.
DOIs	https://doi.org/10.1088/0268-1242/19/4/140
State	Published - Apr 2004

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abstract = "Field-induced electron transport in an InxGa1-xN (x ≅ 0.4) sample grown on GaN has been studied by subpicosecond Raman spectroscopy. Non-equilibrium electron distribution and electron drift velocity due to the presence of piezoelectric and spontaneous fields in the In xGa1-xN layer have been directly measured. The experimental results are compared with ensemble Monte Carlo calculations and reasonable agreements are obtained.",

author = "W. Liang and Tsen, {K. T.} and Ferry, {D. K.} and Kim, {K. H.} and Lin, {J. Y.} and Jiang, {H. X.}",

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AU - Liang, W.

AU - Tsen, K. T.

AU - Ferry, D. K.

AU - Kim, K. H.

AU - Lin, J. Y.

AU - Jiang, H. X.

PY - 2004/4

Y1 - 2004/4

N2 - Field-induced electron transport in an InxGa1-xN (x ≅ 0.4) sample grown on GaN has been studied by subpicosecond Raman spectroscopy. Non-equilibrium electron distribution and electron drift velocity due to the presence of piezoelectric and spontaneous fields in the In xGa1-xN layer have been directly measured. The experimental results are compared with ensemble Monte Carlo calculations and reasonable agreements are obtained.

AB - Field-induced electron transport in an InxGa1-xN (x ≅ 0.4) sample grown on GaN has been studied by subpicosecond Raman spectroscopy. Non-equilibrium electron distribution and electron drift velocity due to the presence of piezoelectric and spontaneous fields in the In xGa1-xN layer have been directly measured. The experimental results are compared with ensemble Monte Carlo calculations and reasonable agreements are obtained.

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DO - 10.1088/0268-1242/19/4/140

M3 - Article

AN - SCOPUS:1942420249

SN - 0268-1242

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IS - 4 SPEC. ISS.

ER -

Field-induced non-equilibrium electron transport in an In _0.4Ga_0.6N epilayer grown on GaN studied by subpicosecond raman spectroscopy

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