Field-induced non-equilibrium electron transport in an In 0.4Ga0.6N epilayer grown on GaN studied by subpicosecond raman spectroscopy

W. Liang, K. T. Tsen, D. K. Ferry, K. H. Kim, J. Y. Lin, H. X. Jiang

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Abstract

Field-induced electron transport in an InxGa1-xN (x ≅ 0.4) sample grown on GaN has been studied by subpicosecond Raman spectroscopy. Non-equilibrium electron distribution and electron drift velocity due to the presence of piezoelectric and spontaneous fields in the In xGa1-xN layer have been directly measured. The experimental results are compared with ensemble Monte Carlo calculations and reasonable agreements are obtained.

Original languageEnglish
Pages (from-to)S427-S429
JournalSemiconductor Science and Technology
Volume19
Issue number4 SPEC. ISS.
DOIs
StatePublished - Apr 2004

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