Failure analysis of 1200-V/150-A SiC MOSFET under repetitive pulsed overcurrent conditions

James Schrock; Bejoy N Pushpakaran; Argenis Bilbao; William Ray; Emily A Hirsch; Mitchell Kelley; Shad L Holt; Stephen Bayne

Failure analysis of 1200-V/150-A SiC MOSFET under repetitive pulsed overcurrent conditions

James Schrock, Bejoy N Pushpakaran, Argenis Bilbao, William Ray, Emily A Hirsch, Mitchell Kelley, Shad L Holt, Stephen Bayne

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	1816–1821
Journal	IEEE Transactions on Power Electronics
State	Published - 2016

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@article{46420e0cca30472b85f7e891b44601c7,

title = "Failure analysis of 1200-V/150-A SiC MOSFET under repetitive pulsed overcurrent conditions",

author = "James Schrock and Pushpakaran, {Bejoy N} and Argenis Bilbao and William Ray and Hirsch, {Emily A} and Mitchell Kelley and Holt, {Shad L} and Stephen Bayne",

year = "2016",

language = "English",

pages = "1816–1821",

journal = "IEEE Transactions on Power Electronics",

}

TY - JOUR

T1 - Failure analysis of 1200-V/150-A SiC MOSFET under repetitive pulsed overcurrent conditions

AU - Schrock, James

AU - Pushpakaran, Bejoy N

AU - Bilbao, Argenis

AU - Ray, William

AU - Hirsch, Emily A

AU - Kelley, Mitchell

AU - Holt, Shad L

AU - Bayne, Stephen

PY - 2016

Y1 - 2016

M3 - Article

SP - 1816

EP - 1821

JO - IEEE Transactions on Power Electronics

JF - IEEE Transactions on Power Electronics

ER -

Failure analysis of 1200-V/150-A SiC MOSFET under repetitive pulsed overcurrent conditions

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