Original language | English |
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Pages (from-to) | 1816–1821 |
Journal | IEEE Transactions on Power Electronics |
State | Published - 2016 |
Failure analysis of 1200-V/150-A SiC MOSFET under repetitive pulsed overcurrent conditions
James Schrock, Bejoy N Pushpakaran, Argenis Bilbao, William Ray, Emily A Hirsch, Mitchell Kelley, Shad L Holt, Stephen Bayne
Research output: Contribution to journal › Article › peer-review