Failure Analysis of 1200-V / 150-A SiC MOSFET under Repetitive Pulsed Overcurrent Conditions

James Schrock; Bejoy Pushpakaran; Argenis Bilbao; William Ray; Emily Hirsch; Mitchell Kelley; Shad Holt; Stephen Bayne

Failure Analysis of 1200-V / 150-A SiC MOSFET under Repetitive Pulsed Overcurrent Conditions

James Schrock, Bejoy Pushpakaran, Argenis Bilbao, William Ray, Emily Hirsch, Mitchell Kelley, Shad Holt, Stephen Bayne

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

Original language	English
Journal	IEEE Transactions on Power Electronics
State	Published - Mar 2016

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@article{1571cac2b3344364ad87f052584a86c4,

title = "Failure Analysis of 1200-V / 150-A SiC MOSFET under Repetitive Pulsed Overcurrent Conditions",

author = "James Schrock and Bejoy Pushpakaran and Argenis Bilbao and William Ray and Emily Hirsch and Mitchell Kelley and Shad Holt and Stephen Bayne",

year = "2016",

month = mar,

language = "English",

journal = "IEEE Transactions on Power Electronics",

}

TY - JOUR

T1 - Failure Analysis of 1200-V / 150-A SiC MOSFET under Repetitive Pulsed Overcurrent Conditions

AU - Schrock, James

AU - Pushpakaran, Bejoy

AU - Bilbao, Argenis

AU - Ray, William

AU - Hirsch, Emily

AU - Kelley, Mitchell

AU - Holt, Shad

AU - Bayne, Stephen

PY - 2016/3

Y1 - 2016/3

M3 - Article

JO - IEEE Transactions on Power Electronics

JF - IEEE Transactions on Power Electronics

ER -

Failure Analysis of 1200-V / 150-A SiC MOSFET under Repetitive Pulsed Overcurrent Conditions

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