Fabrication of n-type nickel doped B5C1+δ homojunction and heterojunction diodes

Seong Don Hwang; Ken Yang; P. A. Dowben; Ahmad A. Ahmad; N. J. Ianno; J. Z. Li; J. Y. Lin; H. X. Jiang; D. N. Mcllroy

doi:10.1063/1.118434

Fabrication of n-type nickel doped B₅C_1+δ homojunction and heterojunction diodes

Seong Don Hwang, Ken Yang, P. A. Dowben, Ahmad A. Ahmad, N. J. Ianno, J. Z. Li, J. Y. Lin, H. X. Jiang, D. N. Mcllroy

Electrical and Computer Engineering

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66 Scopus citations

Abstract

We have successfully nickel doped a boron carbide (B₅C) alloy film. The nickel doped boron-carbide (Ni-B₅C_1+δ) thin films were fabricated from a single source carborane cage molecule and nickelocene [Ni(C₅H₅)₂] using plasma enhanced chemical vapor deposition. Nickel doping transforms the highly resistive undoped film from a p-type material to an n-type material. This has been verified from the characteristics of diodes constructed of Ni-B₅C_1+δ on both n-type silicon and p-type B₅C. The homojunction diodes exhibit excellent rectifying properties over a wide range of temperatures.

Original language	English
Pages (from-to)	1028-1030
Number of pages	3
Journal	Applied Physics Letters
Volume	70
Issue number	8
DOIs	https://doi.org/10.1063/1.118434
State	Published - Feb 24 1997

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title = "Fabrication of n-type nickel doped B5C1+δ homojunction and heterojunction diodes",

abstract = "We have successfully nickel doped a boron carbide (B5C) alloy film. The nickel doped boron-carbide (Ni-B5C1+δ) thin films were fabricated from a single source carborane cage molecule and nickelocene [Ni(C5H5)2] using plasma enhanced chemical vapor deposition. Nickel doping transforms the highly resistive undoped film from a p-type material to an n-type material. This has been verified from the characteristics of diodes constructed of Ni-B5C1+δ on both n-type silicon and p-type B5C. The homojunction diodes exhibit excellent rectifying properties over a wide range of temperatures.",

author = "Hwang, {Seong Don} and Ken Yang and Dowben, {P. A.} and Ahmad, {Ahmad A.} and Ianno, {N. J.} and Li, {J. Z.} and Lin, {J. Y.} and Jiang, {H. X.} and Mcllroy, {D. N.}",

year = "1997",

month = feb,

day = "24",

doi = "10.1063/1.118434",

language = "English",

volume = "70",

pages = "1028--1030",

journal = "Applied Physics Letters",

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T1 - Fabrication of n-type nickel doped B5C1+δ homojunction and heterojunction diodes

AU - Hwang, Seong Don

AU - Yang, Ken

AU - Dowben, P. A.

AU - Ahmad, Ahmad A.

AU - Ianno, N. J.

AU - Li, J. Z.

AU - Lin, J. Y.

AU - Jiang, H. X.

AU - Mcllroy, D. N.

PY - 1997/2/24

Y1 - 1997/2/24

N2 - We have successfully nickel doped a boron carbide (B5C) alloy film. The nickel doped boron-carbide (Ni-B5C1+δ) thin films were fabricated from a single source carborane cage molecule and nickelocene [Ni(C5H5)2] using plasma enhanced chemical vapor deposition. Nickel doping transforms the highly resistive undoped film from a p-type material to an n-type material. This has been verified from the characteristics of diodes constructed of Ni-B5C1+δ on both n-type silicon and p-type B5C. The homojunction diodes exhibit excellent rectifying properties over a wide range of temperatures.

AB - We have successfully nickel doped a boron carbide (B5C) alloy film. The nickel doped boron-carbide (Ni-B5C1+δ) thin films were fabricated from a single source carborane cage molecule and nickelocene [Ni(C5H5)2] using plasma enhanced chemical vapor deposition. Nickel doping transforms the highly resistive undoped film from a p-type material to an n-type material. This has been verified from the characteristics of diodes constructed of Ni-B5C1+δ on both n-type silicon and p-type B5C. The homojunction diodes exhibit excellent rectifying properties over a wide range of temperatures.

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U2 - 10.1063/1.118434

DO - 10.1063/1.118434

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JO - Applied Physics Letters

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SN - 0003-6951

IS - 8

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Fabrication of n-type nickel doped B5C1+δ homojunction and heterojunction diodes

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Fabrication of n-type nickel doped B₅C_1+δ homojunction and heterojunction diodes