Fabrication of n-type nickel doped B5C1+δ homojunction and heterojunction diodes

Seong Don Hwang, Ken Yang, P. A. Dowben, Ahmad A. Ahmad, N. J. Ianno, J. Z. Li, J. Y. Lin, H. X. Jiang, D. N. Mcllroy

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Abstract

We have successfully nickel doped a boron carbide (B5C) alloy film. The nickel doped boron-carbide (Ni-B5C1+δ) thin films were fabricated from a single source carborane cage molecule and nickelocene [Ni(C5H5)2] using plasma enhanced chemical vapor deposition. Nickel doping transforms the highly resistive undoped film from a p-type material to an n-type material. This has been verified from the characteristics of diodes constructed of Ni-B5C1+δ on both n-type silicon and p-type B5C. The homojunction diodes exhibit excellent rectifying properties over a wide range of temperatures.

Original languageEnglish
Pages (from-to)1028-1030
Number of pages3
JournalApplied Physics Letters
Volume70
Issue number8
DOIs
StatePublished - Feb 24 1997

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    Hwang, S. D., Yang, K., Dowben, P. A., Ahmad, A. A., Ianno, N. J., Li, J. Z., Lin, J. Y., Jiang, H. X., & Mcllroy, D. N. (1997). Fabrication of n-type nickel doped B5C1+δ homojunction and heterojunction diodes. Applied Physics Letters, 70(8), 1028-1030. https://doi.org/10.1063/1.118434