Abstract
We have successfully nickel doped a boron carbide (B5C) alloy film. The nickel doped boron-carbide (Ni-B5C1+δ) thin films were fabricated from a single source carborane cage molecule and nickelocene [Ni(C5H5)2] using plasma enhanced chemical vapor deposition. Nickel doping transforms the highly resistive undoped film from a p-type material to an n-type material. This has been verified from the characteristics of diodes constructed of Ni-B5C1+δ on both n-type silicon and p-type B5C. The homojunction diodes exhibit excellent rectifying properties over a wide range of temperatures.
Original language | English |
---|---|
Pages (from-to) | 1028-1030 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 70 |
Issue number | 8 |
DOIs | |
State | Published - Feb 24 1997 |