Abstract
The AlGaN-based Schottky barrier diode was fabricated using electron beam deposited Au and Ti/Al as the Schottky contact and ohmic contact respectively for high power and high temperature applications such as microwave mixers and rectifiers. And the AlGaN/GaN/sapphire was grown by metal organic chemical vapor deposition (MOCVD). Measurements of the I-V characteristics of the diode show that the device has good rectifying property, high breakdown voltage of 95 V and ideal factor with value of 1.93. The forward and reverse current characteristics were improved greatly after annealing at 300°C for 1 min. The barrier height of the Au/AlGaN Schottky contact was as high as 1.08 eV by analysis of various I-V curves under corresponding temperatures. The results show that the device can be used in high power and large current rectification.
| Original language | English |
|---|---|
| Pages (from-to) | 1244-1247 |
| Number of pages | 4 |
| Journal | Zhejiang Daxue Xuebao (Gongxue Ban)/Journal of Zhejiang University (Engineering Science) |
| Volume | 38 |
| Issue number | 10 |
| State | Published - Oct 2004 |
Keywords
- AlGaN
- Barrier height
- Schottkty barrier diode