Fabrication and investigation of AlGaN-based Schottky barrier diode

Qing Hui Shao; Zhi Zhen Ye; Jing Yun Huang; Bing Hui Zhao; Hong Xing Jiang; Jing Yu Lin

Fabrication and investigation of AlGaN-based Schottky barrier diode

Qing Hui Shao, Zhi Zhen Ye, Jing Yun Huang, Bing Hui Zhao, Hong Xing Jiang, Jing Yu Lin

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

The AlGaN-based Schottky barrier diode was fabricated using electron beam deposited Au and Ti/Al as the Schottky contact and ohmic contact respectively for high power and high temperature applications such as microwave mixers and rectifiers. And the AlGaN/GaN/sapphire was grown by metal organic chemical vapor deposition (MOCVD). Measurements of the I-V characteristics of the diode show that the device has good rectifying property, high breakdown voltage of 95 V and ideal factor with value of 1.93. The forward and reverse current characteristics were improved greatly after annealing at 300°C for 1 min. The barrier height of the Au/AlGaN Schottky contact was as high as 1.08 eV by analysis of various I-V curves under corresponding temperatures. The results show that the device can be used in high power and large current rectification.

Original language	English
Pages (from-to)	1244-1247
Number of pages	4
Journal	Zhejiang Daxue Xuebao (Gongxue Ban)/Journal of Zhejiang University (Engineering Science)
Volume	38
Issue number	10
State	Published - Oct 2004

Keywords

AlGaN
Barrier height
Schottkty barrier diode

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title = "Fabrication and investigation of AlGaN-based Schottky barrier diode",

abstract = "The AlGaN-based Schottky barrier diode was fabricated using electron beam deposited Au and Ti/Al as the Schottky contact and ohmic contact respectively for high power and high temperature applications such as microwave mixers and rectifiers. And the AlGaN/GaN/sapphire was grown by metal organic chemical vapor deposition (MOCVD). Measurements of the I-V characteristics of the diode show that the device has good rectifying property, high breakdown voltage of 95 V and ideal factor with value of 1.93. The forward and reverse current characteristics were improved greatly after annealing at 300°C for 1 min. The barrier height of the Au/AlGaN Schottky contact was as high as 1.08 eV by analysis of various I-V curves under corresponding temperatures. The results show that the device can be used in high power and large current rectification.",

keywords = "AlGaN, Barrier height, Schottkty barrier diode",

author = "Shao, {Qing Hui} and Ye, {Zhi Zhen} and Huang, {Jing Yun} and Zhao, {Bing Hui} and Jiang, {Hong Xing} and Lin, {Jing Yu}",

year = "2004",

month = oct,

language = "English",

volume = "38",

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journal = "Zhejiang Daxue Xuebao (Gongxue Ban)/Journal of Zhejiang University (Engineering Science)",

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T1 - Fabrication and investigation of AlGaN-based Schottky barrier diode

AU - Shao, Qing Hui

AU - Ye, Zhi Zhen

AU - Huang, Jing Yun

AU - Zhao, Bing Hui

AU - Jiang, Hong Xing

AU - Lin, Jing Yu

PY - 2004/10

Y1 - 2004/10

N2 - The AlGaN-based Schottky barrier diode was fabricated using electron beam deposited Au and Ti/Al as the Schottky contact and ohmic contact respectively for high power and high temperature applications such as microwave mixers and rectifiers. And the AlGaN/GaN/sapphire was grown by metal organic chemical vapor deposition (MOCVD). Measurements of the I-V characteristics of the diode show that the device has good rectifying property, high breakdown voltage of 95 V and ideal factor with value of 1.93. The forward and reverse current characteristics were improved greatly after annealing at 300°C for 1 min. The barrier height of the Au/AlGaN Schottky contact was as high as 1.08 eV by analysis of various I-V curves under corresponding temperatures. The results show that the device can be used in high power and large current rectification.

AB - The AlGaN-based Schottky barrier diode was fabricated using electron beam deposited Au and Ti/Al as the Schottky contact and ohmic contact respectively for high power and high temperature applications such as microwave mixers and rectifiers. And the AlGaN/GaN/sapphire was grown by metal organic chemical vapor deposition (MOCVD). Measurements of the I-V characteristics of the diode show that the device has good rectifying property, high breakdown voltage of 95 V and ideal factor with value of 1.93. The forward and reverse current characteristics were improved greatly after annealing at 300°C for 1 min. The barrier height of the Au/AlGaN Schottky contact was as high as 1.08 eV by analysis of various I-V curves under corresponding temperatures. The results show that the device can be used in high power and large current rectification.

KW - AlGaN

KW - Barrier height

KW - Schottkty barrier diode

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