Extrinsic optical recombination in pentacene single crystals: Evidence of gap states

Rui He; X. Chi; Aron Pinczuk; D. V. Lang; A. P. Ramirez

doi:10.1063/1.2135494

Extrinsic optical recombination in pentacene single crystals: Evidence of gap states

Rui He, X. Chi, Aron Pinczuk, D. V. Lang, A. P. Ramirez

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

27 Scopus citations

Abstract

Two luminescence bands observed in pentacene single crystals with different degrees of purity are identified as due to extrinsic optical emissions. A band at 1.49 eV remains in the crystal with the highest purity. Its redshift of about 0.3 eV from the free exciton optical recombination suggests that the extrinsic transitions could involve gap states recently discovered in pentacene transistors. Absence of resonance Raman scattering when photon energies overlap the extrinsic recombination suggests that the gap states are likely due to impurities. The temperature dependence of luminescence intensities is interpreted by activated decay of excitons to radiative and nonradiative states.

Original language	English
Article number	211117
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	87
Issue number	21
DOIs	https://doi.org/10.1063/1.2135494
State	Published - 2005

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title = "Extrinsic optical recombination in pentacene single crystals: Evidence of gap states",

abstract = "Two luminescence bands observed in pentacene single crystals with different degrees of purity are identified as due to extrinsic optical emissions. A band at 1.49 eV remains in the crystal with the highest purity. Its redshift of about 0.3 eV from the free exciton optical recombination suggests that the extrinsic transitions could involve gap states recently discovered in pentacene transistors. Absence of resonance Raman scattering when photon energies overlap the extrinsic recombination suggests that the gap states are likely due to impurities. The temperature dependence of luminescence intensities is interpreted by activated decay of excitons to radiative and nonradiative states.",

author = "Rui He and X. Chi and Aron Pinczuk and Lang, {D. V.} and Ramirez, {A. P.}",

note = "Funding Information: This work was supported primarily by the Nanoscale Science and Engineering Initiative of the National Science Foundation under NSF Award No. CHE-0117752, by the New York State Office of Science, Technology, and Academic Research (NYSTAR), by a research grant of the W. M. Keck Foundation, and by DOE Basic Energy Sciences Division, Nanoscience Engineering and Technology program, FWP 04SCPE389. The authors thank Mark Hybertsen, I. Dujovne, and C. F. Hirjibehedin for assistance and discussions. ",

year = "2005",

doi = "10.1063/1.2135494",

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journal = "Applied Physics Letters",

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T1 - Extrinsic optical recombination in pentacene single crystals

T2 - Evidence of gap states

AU - He, Rui

AU - Chi, X.

AU - Pinczuk, Aron

AU - Lang, D. V.

AU - Ramirez, A. P.

N1 - Funding Information: This work was supported primarily by the Nanoscale Science and Engineering Initiative of the National Science Foundation under NSF Award No. CHE-0117752, by the New York State Office of Science, Technology, and Academic Research (NYSTAR), by a research grant of the W. M. Keck Foundation, and by DOE Basic Energy Sciences Division, Nanoscience Engineering and Technology program, FWP 04SCPE389. The authors thank Mark Hybertsen, I. Dujovne, and C. F. Hirjibehedin for assistance and discussions.

PY - 2005

Y1 - 2005

N2 - Two luminescence bands observed in pentacene single crystals with different degrees of purity are identified as due to extrinsic optical emissions. A band at 1.49 eV remains in the crystal with the highest purity. Its redshift of about 0.3 eV from the free exciton optical recombination suggests that the extrinsic transitions could involve gap states recently discovered in pentacene transistors. Absence of resonance Raman scattering when photon energies overlap the extrinsic recombination suggests that the gap states are likely due to impurities. The temperature dependence of luminescence intensities is interpreted by activated decay of excitons to radiative and nonradiative states.

AB - Two luminescence bands observed in pentacene single crystals with different degrees of purity are identified as due to extrinsic optical emissions. A band at 1.49 eV remains in the crystal with the highest purity. Its redshift of about 0.3 eV from the free exciton optical recombination suggests that the extrinsic transitions could involve gap states recently discovered in pentacene transistors. Absence of resonance Raman scattering when photon energies overlap the extrinsic recombination suggests that the gap states are likely due to impurities. The temperature dependence of luminescence intensities is interpreted by activated decay of excitons to radiative and nonradiative states.

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Extrinsic optical recombination in pentacene single crystals: Evidence of gap states

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