Abstract
Lapping is an important material-removal process for manufacturing of substrate wafers. Objectives of lapping include removing subsurface damage in sliced wafers, thinning wafers to target thickness, and achieving a high degree of parallelism and flatness of wafer surfaces. This paper reviews the literature on lapping of substrate wafers. It presents reported experimental results on effects of input parameters (lapping pressure, plate rotation speed, abrasive grain size, slurry concentration, and slurry flow rate) on material removal rate and surface roughness.
| Original language | English |
|---|---|
| Pages (from-to) | 23-31 |
| Number of pages | 9 |
| Journal | Key Engineering Materials |
| Volume | 404 |
| DOIs | |
| State | Published - 2009 |
Keywords
- Lapping
- Material removal rate
- Sapphire
- Silicon
- Substrate wafer
- Surface roughness