TY - GEN
T1 - Experimental investigations and behavior modeling for monolithic quasi-class E SiGe PA linearization
AU - Li, Yan
AU - Lopez, Jerry
AU - Lie, Donald Y.
AU - Popp, Jeremy D.
PY - 2008
Y1 - 2008
N2 - We have developed a modified bias-dependent Cann's model and performed IC design and hardware experiments to study the linearization of a highly-efficient monolithic quasi-class E SiGe power amplifier (PA) IC using both Envelope-Tracking (ET) and Envelope-Elimination-and-Restoration (EER) techniques. Our simple PA behavior model fits the measured SiGe PA IC data very well across a wide range of bias and supply voltages. Both measurement and simulations show that the ET-linearized PA system is significantly less sensitive to the timing misalignment between the amplitude and the RF signal path than the EER-linearized PA system. Our experimental results also show that ET successfully linearized the SiGe PA to pass the stringent EDGE transmit mask at 900MHz, while EER could not. Simulations also predict that the optimal timing alignment for ET linearization can be achieved at PA base bias voltage V bb=0.55-6V, which is consistent with our measurement results as well.
AB - We have developed a modified bias-dependent Cann's model and performed IC design and hardware experiments to study the linearization of a highly-efficient monolithic quasi-class E SiGe power amplifier (PA) IC using both Envelope-Tracking (ET) and Envelope-Elimination-and-Restoration (EER) techniques. Our simple PA behavior model fits the measured SiGe PA IC data very well across a wide range of bias and supply voltages. Both measurement and simulations show that the ET-linearized PA system is significantly less sensitive to the timing misalignment between the amplitude and the RF signal path than the EER-linearized PA system. Our experimental results also show that ET successfully linearized the SiGe PA to pass the stringent EDGE transmit mask at 900MHz, while EER could not. Simulations also predict that the optimal timing alignment for ET linearization can be achieved at PA base bias voltage V bb=0.55-6V, which is consistent with our measurement results as well.
UR - http://www.scopus.com/inward/record.url?scp=58149173150&partnerID=8YFLogxK
U2 - 10.1109/ICCCAS.2008.4658013
DO - 10.1109/ICCCAS.2008.4658013
M3 - Conference contribution
AN - SCOPUS:58149173150
SN - 9781424420636
T3 - 2008 International Conference on Communications, Circuits and Systems Proceedings, ICCCAS 2008
SP - 1337
EP - 1341
BT - 2008 International Conference on Communications, Circuits and Systems Proceedings, ICCCAS 2008
T2 - 2008 International Conference on Communications, Circuits and Systems, ICCCAS 2008
Y2 - 25 May 2008 through 27 May 2008
ER -