Excitonic recombination in GaN grown by molecular beam epitaxy

M. Smith, G. D. Chen, J. Z. Li, J. Y. Lin, H. X. Jiang, A. Salvador, W. K. Kim, O. Aktas, A. Botchkarev, H. Morkoç

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Abstract

Time-resolved photoluminescence has been employed to probe the free-excitonic transitions and their dynamic processes in GaN grown by molecular beam epitaxy (MBE). The exciton photoluminescence spectral line shape, quantum yield, and recombination lifetimes have been measured at different excitation intensities and temperatures, from which the binding energy of an exciton, the energy band gap, and the free-exciton radiative recombination lifetimes of GaN grown by MBE have been obtained. Our results have demonstrated the superior crystalline quality as well as ultrahigh purity of the investigated sample, implying a new major breakthrough in MBE growth technologies for GaN.

Original languageEnglish
Pages (from-to)3387
Number of pages1
JournalApplied Physics Letters
Volume67
DOIs
StatePublished - 1995

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    Smith, M., Chen, G. D., Li, J. Z., Lin, J. Y., Jiang, H. X., Salvador, A., Kim, W. K., Aktas, O., Botchkarev, A., & Morkoç, H. (1995). Excitonic recombination in GaN grown by molecular beam epitaxy. Applied Physics Letters, 67, 3387. https://doi.org/10.1063/1.114902