Excitonic luminescence linewidths in AlGaN alloys with high aluminum concentrations

Giuliano Coli, K. K. Bajaj, J. Li, J. Y. Lin, H. X. Jiang

Research output: Contribution to journalArticlepeer-review

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In this work, we report a study of the behavior of linewidths of excitonic photoluminescence transitions measured at 10 K in AlGaN alloys for high Al concentrations of 0.5 and 0.7. Our samples were grown by low-pressure metalorganic chemical vapor deposition on (0001) oriented sapphire substrates. We find that the values of the excitonic linewidths we measure agree very well with those calculated using a model in which the broadening effect is assumed to be due to compositional disorder in completely random semiconductor alloys thus attesting to an excellent quality of our samples even with high Al concentrations.

Original languageEnglish
Pages (from-to)2907-2909
Number of pages3
JournalApplied Physics Letters
Issue number16
StatePublished - Apr 22 2002


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