Excitonic luminescence linewidths in AlGaN alloys with high aluminum concentrations

Giuliano Coli; K. K. Bajaj; J. Li; J. Y. Lin; H. X. Jiang

doi:10.1063/1.1471932

Excitonic luminescence linewidths in AlGaN alloys with high aluminum concentrations

Giuliano Coli, K. K. Bajaj, J. Li, J. Y. Lin, H. X. Jiang

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Abstract

In this work, we report a study of the behavior of linewidths of excitonic photoluminescence transitions measured at 10 K in AlGaN alloys for high Al concentrations of 0.5 and 0.7. Our samples were grown by low-pressure metalorganic chemical vapor deposition on (0001) oriented sapphire substrates. We find that the values of the excitonic linewidths we measure agree very well with those calculated using a model in which the broadening effect is assumed to be due to compositional disorder in completely random semiconductor alloys thus attesting to an excellent quality of our samples even with high Al concentrations.

Original language	English
Pages (from-to)	2907-2909
Number of pages	3
Journal	Applied Physics Letters
Volume	80
Issue number	16
DOIs	https://doi.org/10.1063/1.1471932
State	Published - Apr 22 2002

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title = "Excitonic luminescence linewidths in AlGaN alloys with high aluminum concentrations",

abstract = "In this work, we report a study of the behavior of linewidths of excitonic photoluminescence transitions measured at 10 K in AlGaN alloys for high Al concentrations of 0.5 and 0.7. Our samples were grown by low-pressure metalorganic chemical vapor deposition on (0001) oriented sapphire substrates. We find that the values of the excitonic linewidths we measure agree very well with those calculated using a model in which the broadening effect is assumed to be due to compositional disorder in completely random semiconductor alloys thus attesting to an excellent quality of our samples even with high Al concentrations.",

author = "Giuliano Coli and Bajaj, {K. K.} and J. Li and Lin, {J. Y.} and Jiang, {H. X.}",

year = "2002",

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journal = "Applied Physics Letters",

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T1 - Excitonic luminescence linewidths in AlGaN alloys with high aluminum concentrations

AU - Coli, Giuliano

AU - Bajaj, K. K.

AU - Li, J.

AU - Lin, J. Y.

AU - Jiang, H. X.

PY - 2002/4/22

Y1 - 2002/4/22

N2 - In this work, we report a study of the behavior of linewidths of excitonic photoluminescence transitions measured at 10 K in AlGaN alloys for high Al concentrations of 0.5 and 0.7. Our samples were grown by low-pressure metalorganic chemical vapor deposition on (0001) oriented sapphire substrates. We find that the values of the excitonic linewidths we measure agree very well with those calculated using a model in which the broadening effect is assumed to be due to compositional disorder in completely random semiconductor alloys thus attesting to an excellent quality of our samples even with high Al concentrations.

AB - In this work, we report a study of the behavior of linewidths of excitonic photoluminescence transitions measured at 10 K in AlGaN alloys for high Al concentrations of 0.5 and 0.7. Our samples were grown by low-pressure metalorganic chemical vapor deposition on (0001) oriented sapphire substrates. We find that the values of the excitonic linewidths we measure agree very well with those calculated using a model in which the broadening effect is assumed to be due to compositional disorder in completely random semiconductor alloys thus attesting to an excellent quality of our samples even with high Al concentrations.

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DO - 10.1063/1.1471932

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VL - 80

SP - 2907

EP - 2909

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 16

ER -

Excitonic luminescence linewidths in AlGaN alloys with high aluminum concentrations

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