Exciton localization dynamics in Al xGa 1-xN alloys

H. S. Kim, R. A. Mair, J. Li, J. Y. Lin, H. X. Jiang

Research output: Contribution to journalConference article

Abstract

The optical properties of Al xGa 1-xN alloys with x varied from 0 to 0.35 have been investigated by picosecond time-resolved photoluminescence (PL) spectroscopy. Our results revealed that while the PL intensity decreases with an increase of Al-content, the low temperature PL decay lifetime increases with Al-content. These results can be understood in terms of the effects of tail states in the density of states due to alloy fluctuation in the Al xGa 1-xN alloys. The Al content dependence of the energy tail state distribution parameter, E 0, which is an important parameter for determining optical and electrical properties of the AlGaN alloys, has been obtained experimentally. The PL decay lifetime increases with the localization energy and consequently increases with Al content. The implications of our findings to III-nitride optoelectronic device applications are also discussed.

Original languageEnglish
Pages (from-to)139-144
Number of pages6
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume3940
StatePublished - 2000
EventUltrafast Phenomena in Semiconductors IV - San Jose, CA, USA
Duration: Jan 27 2000Jan 28 2000

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