Exciton localization dynamics in Al xGa 1-xN alloys

H. S. Kim; R. A. Mair; J. Li; J. Y. Lin; H. X. Jiang

Exciton localization dynamics in Al _xGa _1-xN alloys

H. S. Kim, R. A. Mair, J. Li, J. Y. Lin, H. X. Jiang

Electrical and Computer Engineering

Research output: Contribution to journal › Conference article › peer-review

Abstract

The optical properties of Al _xGa _1-xN alloys with x varied from 0 to 0.35 have been investigated by picosecond time-resolved photoluminescence (PL) spectroscopy. Our results revealed that while the PL intensity decreases with an increase of Al-content, the low temperature PL decay lifetime increases with Al-content. These results can be understood in terms of the effects of tail states in the density of states due to alloy fluctuation in the Al _xGa _1-xN alloys. The Al content dependence of the energy tail state distribution parameter, E ₀, which is an important parameter for determining optical and electrical properties of the AlGaN alloys, has been obtained experimentally. The PL decay lifetime increases with the localization energy and consequently increases with Al content. The implications of our findings to III-nitride optoelectronic device applications are also discussed.

Original language	English
Pages (from-to)	139-144
Number of pages	6
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	3940
State	Published - 2000
Event	Ultrafast Phenomena in Semiconductors IV - San Jose, CA, USA Duration: Jan 27 2000 → Jan 28 2000

Cite this

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title = "Exciton localization dynamics in Al xGa 1-xN alloys",

abstract = "The optical properties of Al xGa 1-xN alloys with x varied from 0 to 0.35 have been investigated by picosecond time-resolved photoluminescence (PL) spectroscopy. Our results revealed that while the PL intensity decreases with an increase of Al-content, the low temperature PL decay lifetime increases with Al-content. These results can be understood in terms of the effects of tail states in the density of states due to alloy fluctuation in the Al xGa 1-xN alloys. The Al content dependence of the energy tail state distribution parameter, E 0, which is an important parameter for determining optical and electrical properties of the AlGaN alloys, has been obtained experimentally. The PL decay lifetime increases with the localization energy and consequently increases with Al content. The implications of our findings to III-nitride optoelectronic device applications are also discussed.",

author = "Kim, {H. S.} and Mair, {R. A.} and J. Li and Lin, {J. Y.} and Jiang, {H. X.}",

year = "2000",

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volume = "3940",

pages = "139--144",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

note = "Ultrafast Phenomena in Semiconductors IV ; Conference date: 27-01-2000 Through 28-01-2000",

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TY - JOUR

T1 - Exciton localization dynamics in Al xGa 1-xN alloys

AU - Kim, H. S.

AU - Mair, R. A.

AU - Li, J.

AU - Lin, J. Y.

AU - Jiang, H. X.

PY - 2000

Y1 - 2000

N2 - The optical properties of Al xGa 1-xN alloys with x varied from 0 to 0.35 have been investigated by picosecond time-resolved photoluminescence (PL) spectroscopy. Our results revealed that while the PL intensity decreases with an increase of Al-content, the low temperature PL decay lifetime increases with Al-content. These results can be understood in terms of the effects of tail states in the density of states due to alloy fluctuation in the Al xGa 1-xN alloys. The Al content dependence of the energy tail state distribution parameter, E 0, which is an important parameter for determining optical and electrical properties of the AlGaN alloys, has been obtained experimentally. The PL decay lifetime increases with the localization energy and consequently increases with Al content. The implications of our findings to III-nitride optoelectronic device applications are also discussed.

AB - The optical properties of Al xGa 1-xN alloys with x varied from 0 to 0.35 have been investigated by picosecond time-resolved photoluminescence (PL) spectroscopy. Our results revealed that while the PL intensity decreases with an increase of Al-content, the low temperature PL decay lifetime increases with Al-content. These results can be understood in terms of the effects of tail states in the density of states due to alloy fluctuation in the Al xGa 1-xN alloys. The Al content dependence of the energy tail state distribution parameter, E 0, which is an important parameter for determining optical and electrical properties of the AlGaN alloys, has been obtained experimentally. The PL decay lifetime increases with the localization energy and consequently increases with Al content. The implications of our findings to III-nitride optoelectronic device applications are also discussed.

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M3 - Conference article

AN - SCOPUS:0033738387

SN - 0277-786X

VL - 3940

SP - 139

EP - 144

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - Ultrafast Phenomena in Semiconductors IV

Y2 - 27 January 2000 through 28 January 2000

ER -

Exciton localization dynamics in Al _xGa _1-xN alloys

Abstract

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