Excitation dynamics of the 1.54 μm emission in Er doped GaN synthesized by metal organic chemical vapor deposition

C. Ugolini; N. Nepal; J. Y. Lin; H. X. Jiang; J. M. Zavada

doi:10.1063/1.2450641

Excitation dynamics of the 1.54 μm emission in Er doped GaN synthesized by metal organic chemical vapor deposition

C. Ugolini, N. Nepal, J. Y. Lin, H. X. Jiang, J. M. Zavada

Electrical and Computer Engineering

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Abstract

The authors report on the excitation dynamics of the photoluminescence (PL) emission of Er doped GaN thin films synthesized by metal organic chemical vapor deposition. Using the frequency tripled output from a Ti:sapphire laser, the authors obtained PL spectra covering the ultraviolet (UV) to the infrared regions. In the UV, a dominant band edge emission at 3.23 eV was observed at room temperature; this is redshifted by 0.19 eV from the band edge emission of undoped GaN. An activation energy of 191 meV was obtained from the thermal quenching of the integrated intensity of the 1.54 μm emission line. This value coincides with the redshift of the band edge emission and is assigned to the ErGa - VN complex level.

Original language	English
Article number	051110
Journal	Applied Physics Letters
Volume	90
Issue number	5
DOIs	https://doi.org/10.1063/1.2450641
State	Published - 2007

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@article{a0130fe41a2e48ba9a2ef6d333006a22,

title = "Excitation dynamics of the 1.54 μm emission in Er doped GaN synthesized by metal organic chemical vapor deposition",

abstract = "The authors report on the excitation dynamics of the photoluminescence (PL) emission of Er doped GaN thin films synthesized by metal organic chemical vapor deposition. Using the frequency tripled output from a Ti:sapphire laser, the authors obtained PL spectra covering the ultraviolet (UV) to the infrared regions. In the UV, a dominant band edge emission at 3.23 eV was observed at room temperature; this is redshifted by 0.19 eV from the band edge emission of undoped GaN. An activation energy of 191 meV was obtained from the thermal quenching of the integrated intensity of the 1.54 μm emission line. This value coincides with the redshift of the band edge emission and is assigned to the ErGa - VN complex level.",

author = "C. Ugolini and N. Nepal and Lin, {J. Y.} and Jiang, {H. X.} and Zavada, {J. M.}",

note = "Funding Information: This work is supported by ARO under Grant No. (W911NF-06-1-0134).",

year = "2007",

doi = "10.1063/1.2450641",

language = "English",

volume = "90",

journal = "Applied Physics Letters",

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TY - JOUR

T1 - Excitation dynamics of the 1.54 μm emission in Er doped GaN synthesized by metal organic chemical vapor deposition

AU - Ugolini, C.

AU - Nepal, N.

AU - Lin, J. Y.

AU - Jiang, H. X.

AU - Zavada, J. M.

N1 - Funding Information: This work is supported by ARO under Grant No. (W911NF-06-1-0134).

PY - 2007

Y1 - 2007

N2 - The authors report on the excitation dynamics of the photoluminescence (PL) emission of Er doped GaN thin films synthesized by metal organic chemical vapor deposition. Using the frequency tripled output from a Ti:sapphire laser, the authors obtained PL spectra covering the ultraviolet (UV) to the infrared regions. In the UV, a dominant band edge emission at 3.23 eV was observed at room temperature; this is redshifted by 0.19 eV from the band edge emission of undoped GaN. An activation energy of 191 meV was obtained from the thermal quenching of the integrated intensity of the 1.54 μm emission line. This value coincides with the redshift of the band edge emission and is assigned to the ErGa - VN complex level.

AB - The authors report on the excitation dynamics of the photoluminescence (PL) emission of Er doped GaN thin films synthesized by metal organic chemical vapor deposition. Using the frequency tripled output from a Ti:sapphire laser, the authors obtained PL spectra covering the ultraviolet (UV) to the infrared regions. In the UV, a dominant band edge emission at 3.23 eV was observed at room temperature; this is redshifted by 0.19 eV from the band edge emission of undoped GaN. An activation energy of 191 meV was obtained from the thermal quenching of the integrated intensity of the 1.54 μm emission line. This value coincides with the redshift of the band edge emission and is assigned to the ErGa - VN complex level.

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U2 - 10.1063/1.2450641

DO - 10.1063/1.2450641

M3 - Article

AN - SCOPUS:33846942950

SN - 0003-6951

VL - 90

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 5

M1 - 051110

ER -

Excitation dynamics of the 1.54 μm emission in Er doped GaN synthesized by metal organic chemical vapor deposition

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