Excitation cross section of erbium-doped GaN waveguides under 980 nm optical pumping

R. Hui; R. Xie; I. W. Feng; Z. Y. Sun; J. Y. Lin; H. X. Jiang

doi:10.1063/1.4892427

Excitation cross section of erbium-doped GaN waveguides under 980 nm optical pumping

R. Hui, R. Xie, I. W. Feng, Z. Y. Sun, J. Y. Lin, H. X. Jiang

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

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Abstract

Excitation cross section of erbium-doped GaN waveguides is measured to be approximately 2.2×10-21cm2 at 980 nm pumping wavelength. This cross section value is found relatively insensitive to the crystalline quality of epilayers. However, spontaneous emission carrier lifetimes in these waveguides are directly related to both the crystalline quality and the optical loss, and thus can be used as a material quality indicator.

Original language	English
Article number	051106
Journal	Applied Physics Letters
Volume	105
Issue number	5
DOIs	https://doi.org/10.1063/1.4892427
State	Published - Aug 4 2014

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@article{296cae20bed04ef7a617d648f96c016d,

title = "Excitation cross section of erbium-doped GaN waveguides under 980 nm optical pumping",

abstract = "Excitation cross section of erbium-doped GaN waveguides is measured to be approximately 2.2×10-21cm2 at 980 nm pumping wavelength. This cross section value is found relatively insensitive to the crystalline quality of epilayers. However, spontaneous emission carrier lifetimes in these waveguides are directly related to both the crystalline quality and the optical loss, and thus can be used as a material quality indicator.",

author = "R. Hui and R. Xie and Feng, {I. W.} and Sun, {Z. Y.} and Lin, {J. Y.} and Jiang, {H. X.}",

year = "2014",

month = aug,

day = "4",

doi = "10.1063/1.4892427",

language = "English",

volume = "105",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "AIP Publishing",

number = "5",

}

TY - JOUR

T1 - Excitation cross section of erbium-doped GaN waveguides under 980 nm optical pumping

AU - Hui, R.

AU - Xie, R.

AU - Feng, I. W.

AU - Sun, Z. Y.

AU - Lin, J. Y.

AU - Jiang, H. X.

PY - 2014/8/4

Y1 - 2014/8/4

N2 - Excitation cross section of erbium-doped GaN waveguides is measured to be approximately 2.2×10-21cm2 at 980 nm pumping wavelength. This cross section value is found relatively insensitive to the crystalline quality of epilayers. However, spontaneous emission carrier lifetimes in these waveguides are directly related to both the crystalline quality and the optical loss, and thus can be used as a material quality indicator.

AB - Excitation cross section of erbium-doped GaN waveguides is measured to be approximately 2.2×10-21cm2 at 980 nm pumping wavelength. This cross section value is found relatively insensitive to the crystalline quality of epilayers. However, spontaneous emission carrier lifetimes in these waveguides are directly related to both the crystalline quality and the optical loss, and thus can be used as a material quality indicator.

UR - http://www.scopus.com/inward/record.url?scp=84905576294&partnerID=8YFLogxK

U2 - 10.1063/1.4892427

DO - 10.1063/1.4892427

M3 - Article

AN - SCOPUS:84905576294

SN - 0003-6951

VL - 105

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 5

M1 - 051106

ER -

Excitation cross section of erbium-doped GaN waveguides under 980 nm optical pumping

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