SiC power BJTs have been developed over the last five years into a sufficiently mature technology (1-5). The reliability and applications of these devices are now being studied. This paper summarizes the evolution of this development culminating into the most recent performance of the 1600 V, 20 A devices with a current gain of 40 in the linear region, a forced current gain of 27 in the saturation region and a specific on-resistance of 4.5 mohm-cm 2.
|Number of pages||4|
|Journal||Proceedings of the International Symposium on Power Semiconductor Devices and ICs|
|State||Published - 2005|
|Event||17th International Symposium on Power Semiconductor Devices and ICs, ISPSD'05 - Sanata Barbara, CA, United States|
Duration: May 23 2005 → May 26 2005