Evolution of the 1600 V, 20 A, SiC bipolar junction transistors

Anant K. Agarwal; Sumi Krishnaswami; James Richmond; Craig Capell; Sei Hyung Ryu; John W. Palmour; Santosh Balachandran; T. Paul Chow; Stephen Bayne; Bruce Geil; Charles Scozzie; Kenneth A. Jones

Evolution of the 1600 V, 20 A, SiC bipolar junction transistors

Anant K. Agarwal, Sumi Krishnaswami, James Richmond, Craig Capell, Sei Hyung Ryu, John W. Palmour, Santosh Balachandran, T. Paul Chow, Stephen Bayne, Bruce Geil, Charles Scozzie, Kenneth A. Jones

Electrical and Computer Engineering

Research output: Contribution to journal › Conference article › peer-review

27 Scopus citations

Abstract

SiC power BJTs have been developed over the last five years into a sufficiently mature technology (1-5). The reliability and applications of these devices are now being studied. This paper summarizes the evolution of this development culminating into the most recent performance of the 1600 V, 20 A devices with a current gain of 40 in the linear region, a forced current gain of 27 in the saturation region and a specific on-resistance of 4.5 mohm-cm ².

Original language	English
Article number	HV4-1
Pages (from-to)	271-274
Number of pages	4
Journal	Proceedings of the International Symposium on Power Semiconductor Devices and ICs
State	Published - 2005
Event	17th International Symposium on Power Semiconductor Devices and ICs, ISPSD'05 - Sanata Barbara, CA, United States Duration: May 23 2005 → May 26 2005

Cite this

Agarwal, Anant K. ; Krishnaswami, Sumi ; Richmond, James ; Capell, Craig ; Ryu, Sei Hyung ; Palmour, John W. ; Balachandran, Santosh ; Chow, T. Paul ; Bayne, Stephen ; Geil, Bruce ; Scozzie, Charles ; Jones, Kenneth A. / Evolution of the 1600 V, 20 A, SiC bipolar junction transistors. In: Proceedings of the International Symposium on Power Semiconductor Devices and ICs. 2005 ; pp. 271-274.

@article{b1b01da0b2f648cf9281cd6a9a99ac2b,

title = "Evolution of the 1600 V, 20 A, SiC bipolar junction transistors",

abstract = "SiC power BJTs have been developed over the last five years into a sufficiently mature technology (1-5). The reliability and applications of these devices are now being studied. This paper summarizes the evolution of this development culminating into the most recent performance of the 1600 V, 20 A devices with a current gain of 40 in the linear region, a forced current gain of 27 in the saturation region and a specific on-resistance of 4.5 mohm-cm 2.",

author = "Agarwal, {Anant K.} and Sumi Krishnaswami and James Richmond and Craig Capell and Ryu, {Sei Hyung} and Palmour, {John W.} and Santosh Balachandran and Chow, {T. Paul} and Stephen Bayne and Bruce Geil and Charles Scozzie and Jones, {Kenneth A.}",

year = "2005",

language = "English",

pages = "271--274",

journal = "Proceedings of the International Symposium on Power Semiconductor Devices and ICs",

issn = "1063-6854",

note = "null ; Conference date: 23-05-2005 Through 26-05-2005",

}

Evolution of the 1600 V, 20 A, SiC bipolar junction transistors. / Agarwal, Anant K.; Krishnaswami, Sumi; Richmond, James; Capell, Craig; Ryu, Sei Hyung; Palmour, John W.; Balachandran, Santosh; Chow, T. Paul; Bayne, Stephen; Geil, Bruce; Scozzie, Charles; Jones, Kenneth A.

In: Proceedings of the International Symposium on Power Semiconductor Devices and ICs, 2005, p. 271-274.

Research output: Contribution to journal › Conference article › peer-review

TY - JOUR

T1 - Evolution of the 1600 V, 20 A, SiC bipolar junction transistors

AU - Agarwal, Anant K.

AU - Krishnaswami, Sumi

AU - Richmond, James

AU - Capell, Craig

AU - Ryu, Sei Hyung

AU - Palmour, John W.

AU - Balachandran, Santosh

AU - Chow, T. Paul

AU - Bayne, Stephen

AU - Geil, Bruce

AU - Scozzie, Charles

AU - Jones, Kenneth A.

PY - 2005

Y1 - 2005

N2 - SiC power BJTs have been developed over the last five years into a sufficiently mature technology (1-5). The reliability and applications of these devices are now being studied. This paper summarizes the evolution of this development culminating into the most recent performance of the 1600 V, 20 A devices with a current gain of 40 in the linear region, a forced current gain of 27 in the saturation region and a specific on-resistance of 4.5 mohm-cm 2.

AB - SiC power BJTs have been developed over the last five years into a sufficiently mature technology (1-5). The reliability and applications of these devices are now being studied. This paper summarizes the evolution of this development culminating into the most recent performance of the 1600 V, 20 A devices with a current gain of 40 in the linear region, a forced current gain of 27 in the saturation region and a specific on-resistance of 4.5 mohm-cm 2.

UR - http://www.scopus.com/inward/record.url?scp=27744459641&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:27744459641

SP - 271

EP - 274

JO - Proceedings of the International Symposium on Power Semiconductor Devices and ICs

JF - Proceedings of the International Symposium on Power Semiconductor Devices and ICs

SN - 1063-6854

M1 - HV4-1

Y2 - 23 May 2005 through 26 May 2005

ER -

Evolution of the 1600 V, 20 A, SiC bipolar junction transistors

Abstract

Other files and links

Fingerprint

Cite this