Evolution of the 1600 V, 20 A, SiC bipolar junction transistors

Anant K. Agarwal, Sumi Krishnaswami, James Richmond, Craig Capell, Sei Hyung Ryu, John W. Palmour, Santosh Balachandran, T. Paul Chow, Stephen Bayne, Bruce Geil, Charles Scozzie, Kenneth A. Jones

Research output: Contribution to journalConference articlepeer-review

27 Scopus citations

Abstract

SiC power BJTs have been developed over the last five years into a sufficiently mature technology (1-5). The reliability and applications of these devices are now being studied. This paper summarizes the evolution of this development culminating into the most recent performance of the 1600 V, 20 A devices with a current gain of 40 in the linear region, a forced current gain of 27 in the saturation region and a specific on-resistance of 4.5 mohm-cm 2.

Original languageEnglish
Article numberHV4-1
Pages (from-to)271-274
Number of pages4
JournalProceedings of the International Symposium on Power Semiconductor Devices and ICs
StatePublished - 2005
Event17th International Symposium on Power Semiconductor Devices and ICs, ISPSD'05 - Sanata Barbara, CA, United States
Duration: May 23 2005May 26 2005

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