Evolution of phase separation in In-rich InGaN alloys

B. N. Pantha; J. Li; J. Y. Lin; H. X. Jiang

doi:10.1063/1.3453563

Evolution of phase separation in In-rich InGaN alloys

B. N. Pantha, J. Li, J. Y. Lin, H. X. Jiang

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Abstract

Evolution of phase separation in In_x Ga_1-x N alloys (x∼0.65) grown on AlN/sapphire templates by metal organic chemical vapor deposition has been probed. It was found that growth rate, G_R, is a key parameter and must be high enough (>0.5 μm/h) in order to grow homogeneous and single phase InGaN alloys. Our results implied that conditions far from thermodynamic equilibrium are needed to suppress phase separation. Both structural and electrical properties were found to improve significantly with increasing G_R. The improvement in material quality is attributed to the suppression of phase separation with higher G_R. The maximum thickness of the single phase epilayer tmax (i.e., maximum thickness that can be grown without phase separation) was determined via in situ interference pattern monitoring and found to be a function of G_R. As G_R increases, t_max also increases. The maximum value of t_max for In_0.65 Ga_0.35 N alloy was found to be ∼1.1 μm at G_R >1.8 μm/h.

Original language	English
Article number	232105
Journal	Applied Physics Letters
Volume	96
Issue number	23
DOIs	https://doi.org/10.1063/1.3453563
State	Published - 2010

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title = "Evolution of phase separation in In-rich InGaN alloys",

abstract = "Evolution of phase separation in Inx Ga1-x N alloys (x∼0.65) grown on AlN/sapphire templates by metal organic chemical vapor deposition has been probed. It was found that growth rate, GR, is a key parameter and must be high enough (>0.5 μm/h) in order to grow homogeneous and single phase InGaN alloys. Our results implied that conditions far from thermodynamic equilibrium are needed to suppress phase separation. Both structural and electrical properties were found to improve significantly with increasing GR. The improvement in material quality is attributed to the suppression of phase separation with higher GR. The maximum thickness of the single phase epilayer tmax (i.e., maximum thickness that can be grown without phase separation) was determined via in situ interference pattern monitoring and found to be a function of GR. As GR increases, tmax also increases. The maximum value of tmax for In0.65 Ga0.35 N alloy was found to be ∼1.1 μm at GR >1.8 μm/h.",

author = "Pantha, {B. N.} and J. Li and Lin, {J. Y.} and Jiang, {H. X.}",

note = "Funding Information: This work is supported by NSF (Grant No. DMR-0906879). Jiang and Lin would like to acknowledge the support of Whitacre Endowed Chairs through the AT&T foundation.",

year = "2010",

doi = "10.1063/1.3453563",

language = "English",

volume = "96",

journal = "Applied Physics Letters",

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TY - JOUR

T1 - Evolution of phase separation in In-rich InGaN alloys

AU - Pantha, B. N.

AU - Li, J.

AU - Lin, J. Y.

AU - Jiang, H. X.

N1 - Funding Information: This work is supported by NSF (Grant No. DMR-0906879). Jiang and Lin would like to acknowledge the support of Whitacre Endowed Chairs through the AT&T foundation.

PY - 2010

Y1 - 2010

N2 - Evolution of phase separation in Inx Ga1-x N alloys (x∼0.65) grown on AlN/sapphire templates by metal organic chemical vapor deposition has been probed. It was found that growth rate, GR, is a key parameter and must be high enough (>0.5 μm/h) in order to grow homogeneous and single phase InGaN alloys. Our results implied that conditions far from thermodynamic equilibrium are needed to suppress phase separation. Both structural and electrical properties were found to improve significantly with increasing GR. The improvement in material quality is attributed to the suppression of phase separation with higher GR. The maximum thickness of the single phase epilayer tmax (i.e., maximum thickness that can be grown without phase separation) was determined via in situ interference pattern monitoring and found to be a function of GR. As GR increases, tmax also increases. The maximum value of tmax for In0.65 Ga0.35 N alloy was found to be ∼1.1 μm at GR >1.8 μm/h.

AB - Evolution of phase separation in Inx Ga1-x N alloys (x∼0.65) grown on AlN/sapphire templates by metal organic chemical vapor deposition has been probed. It was found that growth rate, GR, is a key parameter and must be high enough (>0.5 μm/h) in order to grow homogeneous and single phase InGaN alloys. Our results implied that conditions far from thermodynamic equilibrium are needed to suppress phase separation. Both structural and electrical properties were found to improve significantly with increasing GR. The improvement in material quality is attributed to the suppression of phase separation with higher GR. The maximum thickness of the single phase epilayer tmax (i.e., maximum thickness that can be grown without phase separation) was determined via in situ interference pattern monitoring and found to be a function of GR. As GR increases, tmax also increases. The maximum value of tmax for In0.65 Ga0.35 N alloy was found to be ∼1.1 μm at GR >1.8 μm/h.

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VL - 96

JO - Applied Physics Letters

JF - Applied Physics Letters

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Evolution of phase separation in In-rich InGaN alloys

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