Evidence for bistable defects in 6H-SiC

P. Staikov; D. Baum; J. Y. Lin; H. X. Jiang

doi:10.1016/0038-1098(94)90501-0

Evidence for bistable defects in 6H-SiC

P. Staikov, D. Baum, J. Y. Lin, H. X. Jiang

Electrical and Computer Engineering

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Abstract

Electrical properties of nitrogen (N) doped 6H-SiC have been investigated throughout the temperature range from 10 K to 550 K. Scattering mechanisms in different temperature regions have been investigated. Persistent photoconductivity (PPC) has also been observed. Because of the existence of PPC, we have been able to vary continuously the electron concentration, n, within a single sample at fixed temperatures, through the variation of the excitation phonon dose. The electron mobility as a function of the electron concentration, μ(n), has been measured at fixed temperatures. The temperature dependence of the photogenerated electron concentration in the PPC state, {up triangle, open}n, has also been investigated. Experimental results indicate that the defect centers respobsible for the PPC effect are bistable in nature, which is analogous to the DX centers in AlGaAs.

Original language	English
Pages (from-to)	995-998
Number of pages	4
Journal	Solid State Communications
Volume	89
Issue number	12
DOIs	https://doi.org/10.1016/0038-1098(94)90501-0
State	Published - Mar 1994

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Staikov, P., Baum, D., Lin, J. Y., & Jiang, H. X. (1994). Evidence for bistable defects in 6H-SiC. Solid State Communications, 89(12), 995-998. https://doi.org/10.1016/0038-1098(94)90501-0

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abstract = "Electrical properties of nitrogen (N) doped 6H-SiC have been investigated throughout the temperature range from 10 K to 550 K. Scattering mechanisms in different temperature regions have been investigated. Persistent photoconductivity (PPC) has also been observed. Because of the existence of PPC, we have been able to vary continuously the electron concentration, n, within a single sample at fixed temperatures, through the variation of the excitation phonon dose. The electron mobility as a function of the electron concentration, μ(n), has been measured at fixed temperatures. The temperature dependence of the photogenerated electron concentration in the PPC state, {up triangle, open}n, has also been investigated. Experimental results indicate that the defect centers respobsible for the PPC effect are bistable in nature, which is analogous to the DX centers in AlGaAs.",

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AB - Electrical properties of nitrogen (N) doped 6H-SiC have been investigated throughout the temperature range from 10 K to 550 K. Scattering mechanisms in different temperature regions have been investigated. Persistent photoconductivity (PPC) has also been observed. Because of the existence of PPC, we have been able to vary continuously the electron concentration, n, within a single sample at fixed temperatures, through the variation of the excitation phonon dose. The electron mobility as a function of the electron concentration, μ(n), has been measured at fixed temperatures. The temperature dependence of the photogenerated electron concentration in the PPC state, {up triangle, open}n, has also been investigated. Experimental results indicate that the defect centers respobsible for the PPC effect are bistable in nature, which is analogous to the DX centers in AlGaAs.

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