TY - JOUR
T1 - Evidence for bistable defects in 6H-SiC
AU - Staikov, P.
AU - Baum, D.
AU - Lin, J. Y.
AU - Jiang, H. X.
N1 - Funding Information:
discussions with William Schaffer of Crce Research, Inc. and J. Edger. This work is supported by the NSF under grant No. DMR 91-18818 and OSR 92-55223.
PY - 1994/3
Y1 - 1994/3
N2 - Electrical properties of nitrogen (N) doped 6H-SiC have been investigated throughout the temperature range from 10 K to 550 K. Scattering mechanisms in different temperature regions have been investigated. Persistent photoconductivity (PPC) has also been observed. Because of the existence of PPC, we have been able to vary continuously the electron concentration, n, within a single sample at fixed temperatures, through the variation of the excitation phonon dose. The electron mobility as a function of the electron concentration, μ(n), has been measured at fixed temperatures. The temperature dependence of the photogenerated electron concentration in the PPC state, {up triangle, open}n, has also been investigated. Experimental results indicate that the defect centers respobsible for the PPC effect are bistable in nature, which is analogous to the DX centers in AlGaAs.
AB - Electrical properties of nitrogen (N) doped 6H-SiC have been investigated throughout the temperature range from 10 K to 550 K. Scattering mechanisms in different temperature regions have been investigated. Persistent photoconductivity (PPC) has also been observed. Because of the existence of PPC, we have been able to vary continuously the electron concentration, n, within a single sample at fixed temperatures, through the variation of the excitation phonon dose. The electron mobility as a function of the electron concentration, μ(n), has been measured at fixed temperatures. The temperature dependence of the photogenerated electron concentration in the PPC state, {up triangle, open}n, has also been investigated. Experimental results indicate that the defect centers respobsible for the PPC effect are bistable in nature, which is analogous to the DX centers in AlGaAs.
UR - http://www.scopus.com/inward/record.url?scp=0028396260&partnerID=8YFLogxK
U2 - 10.1016/0038-1098(94)90501-0
DO - 10.1016/0038-1098(94)90501-0
M3 - Article
AN - SCOPUS:0028396260
VL - 89
SP - 995
EP - 998
JO - Solid State Communications
JF - Solid State Communications
SN - 0038-1098
IS - 12
ER -