TY - GEN
T1 - Evaluation of the safe operating area of a 2.0 CM2, 4 KV SI SGTO
AU - O'Brien, H.
AU - Shaheen, W.
AU - Crowley, T.
AU - Bayne, S. B.
PY - 2007
Y1 - 2007
N2 - The U. S. Army Research Laboratory (ARL) has been evaluating high voltage, high current modular silicon Super-gate turn-off thyristors (SGTOs) developed by Silicon Power Corporation (SPCO) for ARL. SGTOs were characterized at the individual chip level in order to help understand the capabilities of any scaled up device packages. SGTOs were individually pulsed in two separate test beds: one designed to produce narrow current pulses, and another designed for wider pulses reaching 1 ms. Peak current, rise time and action (I2t) limitations were evaluated across this spectrum of pulse widths to document the Safe Operating Area (SOA) of the Si SGTOs. The peak current attained at a 1.9 μs FWHM pulse width was 20 kA with a 10-90% rate-ofcurrent rise of 26 kA/μs. In the wider pulse circuit, single die were switched as high as 6.2 kA with an action value of 18×103 A2s. Waveforms for various SGTOs were analyzed, and a set of SOA curves was created to represent characterization of the SGTO die. An exploration to minimize recovery time (Tq) is also included, with Tq time reduced to 10 μs following a 1- ms wide, 5 kA pulse.
AB - The U. S. Army Research Laboratory (ARL) has been evaluating high voltage, high current modular silicon Super-gate turn-off thyristors (SGTOs) developed by Silicon Power Corporation (SPCO) for ARL. SGTOs were characterized at the individual chip level in order to help understand the capabilities of any scaled up device packages. SGTOs were individually pulsed in two separate test beds: one designed to produce narrow current pulses, and another designed for wider pulses reaching 1 ms. Peak current, rise time and action (I2t) limitations were evaluated across this spectrum of pulse widths to document the Safe Operating Area (SOA) of the Si SGTOs. The peak current attained at a 1.9 μs FWHM pulse width was 20 kA with a 10-90% rate-ofcurrent rise of 26 kA/μs. In the wider pulse circuit, single die were switched as high as 6.2 kA with an action value of 18×103 A2s. Waveforms for various SGTOs were analyzed, and a set of SOA curves was created to represent characterization of the SGTO die. An exploration to minimize recovery time (Tq) is also included, with Tq time reduced to 10 μs following a 1- ms wide, 5 kA pulse.
UR - http://www.scopus.com/inward/record.url?scp=70350647429&partnerID=8YFLogxK
U2 - 10.1109/PPPS.2007.4652366
DO - 10.1109/PPPS.2007.4652366
M3 - Conference contribution
AN - SCOPUS:70350647429
SN - 1424409144
SN - 9781424409143
T3 - PPPS-2007 - Pulsed Power Plasma Science 2007
SP - 1034
EP - 1039
BT - PPPS-2007
T2 - PPPS-2007: Pulsed Power and Plasma Science 2007, The 16th IEEE International Pulsed Power Conference and The 34th IEEE International Conference on Plasma Science
Y2 - 17 June 2007 through 22 June 2007
ER -