Evaluation of SiC GTOs for pulse power switching

S. B. Bayne; D. Ibitayo

Evaluation of SiC GTOs for pulse power switching

Research output: Contribution to conference › Paper › peer-review

9 Scopus citations

Abstract

Certain applications require devices that can switch high peak current with fast rise times and narrow pulse width. This work was done as an initial study to investigate the performance of Silicon Carbide (SiC) Gate turn-off thyristor (GTO) in these applications. The SiC GTOs were designed for high turn-off gain and not optimized for pulse applications. The GTOs were tested as discharge switches in a low inductance circuit delivering 2μs pulses with a maximum switching current of 1.4 kA (94.6 kA/cm ²) and a current rise time of 2.4 kA/μs. All the devices were switched until failure. The failure modes will be discussed.

Original language	English
Pages	135-138
Number of pages	4
State	Published - 2003
Event	14th IEEE International Pulsed Power Conference - Dallas, TX, United States Duration: Jun 15 2003 → Jun 18 2003

Conference

Conference	14th IEEE International Pulsed Power Conference
Country	United States
City	Dallas, TX
Period	06/15/03 → 06/18/03

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@conference{d54fbf823f024a68851b6952e8e85a17,

title = "Evaluation of SiC GTOs for pulse power switching",

abstract = "Certain applications require devices that can switch high peak current with fast rise times and narrow pulse width. This work was done as an initial study to investigate the performance of Silicon Carbide (SiC) Gate turn-off thyristor (GTO) in these applications. The SiC GTOs were designed for high turn-off gain and not optimized for pulse applications. The GTOs were tested as discharge switches in a low inductance circuit delivering 2μs pulses with a maximum switching current of 1.4 kA (94.6 kA/cm 2) and a current rise time of 2.4 kA/μs. All the devices were switched until failure. The failure modes will be discussed.",

author = "Bayne, {S. B.} and D. Ibitayo",

year = "2003",

language = "English",

pages = "135--138",

}

TY - CONF

T1 - Evaluation of SiC GTOs for pulse power switching

AU - Bayne, S. B.

AU - Ibitayo, D.

PY - 2003

Y1 - 2003

N2 - Certain applications require devices that can switch high peak current with fast rise times and narrow pulse width. This work was done as an initial study to investigate the performance of Silicon Carbide (SiC) Gate turn-off thyristor (GTO) in these applications. The SiC GTOs were designed for high turn-off gain and not optimized for pulse applications. The GTOs were tested as discharge switches in a low inductance circuit delivering 2μs pulses with a maximum switching current of 1.4 kA (94.6 kA/cm 2) and a current rise time of 2.4 kA/μs. All the devices were switched until failure. The failure modes will be discussed.

AB - Certain applications require devices that can switch high peak current with fast rise times and narrow pulse width. This work was done as an initial study to investigate the performance of Silicon Carbide (SiC) Gate turn-off thyristor (GTO) in these applications. The SiC GTOs were designed for high turn-off gain and not optimized for pulse applications. The GTOs were tested as discharge switches in a low inductance circuit delivering 2μs pulses with a maximum switching current of 1.4 kA (94.6 kA/cm 2) and a current rise time of 2.4 kA/μs. All the devices were switched until failure. The failure modes will be discussed.

UR - http://www.scopus.com/inward/record.url?scp=1542346041&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:1542346041

SP - 135

EP - 138

Y2 - 15 June 2003 through 18 June 2003

ER -