Evaluation of SiC GTOs for pulse power switching

S. B. Bayne, D. Ibitayo

Research output: Contribution to conferencePaper

9 Scopus citations

Abstract

Certain applications require devices that can switch high peak current with fast rise times and narrow pulse width. This work was done as an initial study to investigate the performance of Silicon Carbide (SiC) Gate turn-off thyristor (GTO) in these applications. The SiC GTOs were designed for high turn-off gain and not optimized for pulse applications. The GTOs were tested as discharge switches in a low inductance circuit delivering 2μs pulses with a maximum switching current of 1.4 kA (94.6 kA/cm 2) and a current rise time of 2.4 kA/μs. All the devices were switched until failure. The failure modes will be discussed.

Original languageEnglish
Pages135-138
Number of pages4
StatePublished - 2003
Event14th IEEE International Pulsed Power Conference - Dallas, TX, United States
Duration: Jun 15 2003Jun 18 2003

Conference

Conference14th IEEE International Pulsed Power Conference
CountryUnited States
CityDallas, TX
Period06/15/0306/18/03

Fingerprint Dive into the research topics of 'Evaluation of SiC GTOs for pulse power switching'. Together they form a unique fingerprint.

  • Cite this

    Bayne, S. B., & Ibitayo, D. (2003). Evaluation of SiC GTOs for pulse power switching. 135-138. Paper presented at 14th IEEE International Pulsed Power Conference, Dallas, TX, United States.