Evaluation of long term reliability and safe operating area of 15 kV SiC PiN diodes during ultra-high current pulsed conditions

E. A. Hirsch, J. A. Schrock, S. Lacouture, A. Bilbao, S. Bayne, M. Giesselmann, H. O'Brien, A. Ogunniyi

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Silicon Carbide (SiC) is a leading wide bandgap semiconductor for increasing the power density of bigb power applications. This paper overviews the long term reliability and safe operating area of15 kV SiC PiN diodes during pulsed current conditions. An automated system is used to stress these devices with ultra-high current pulses and monitor degradation with in-system characterization. The system is capable of a 100 μs full-width half maximum pulse width up to 15 kA, with a repetition rate of 0.5 Hz. Periodic in-system characterization measures device forward conduction and reverse breakdown. The devices in this paper are pulsed at current levels from 1.5 kA to 2.5 kA. Over 100,000 pulses at 1.5 kA have been performed with no degradation. The long term reliability and failure mode results for the 15 kV PiN diodes will be reviewed.

Original languageEnglish
Title of host publication2016 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages563-567
Number of pages5
ISBN (Electronic)9781509023547
DOIs
StatePublished - Aug 17 2017
Event2016 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2016 - San Francisco, United States
Duration: Jul 5 2016Jul 9 2016

Publication series

Name2016 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2016

Conference

Conference2016 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2016
Country/TerritoryUnited States
CitySan Francisco
Period07/5/1607/9/16

Keywords

  • PiN diodes
  • Reliability
  • Safe operating area
  • Silicon carbide

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