Evaluation of long-term reliability and overcurrent capabilities of 15-kV SiC MOSFETs and 20-kV SiC IGBTs during narrow current pulsed conditions

Matthew Kim, J. J. Forbes, Emily A. Hirsch, James Schrock, Shelby Lacouture, Argenis Bilbao, Stephen B. Bayne, Heather K. O'Brien, Aderinto A. Ogunniyi

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Physics & Astronomy