Evaluation of Long-Term Reliability and Overcurrent Capabilities of 15-kV SiC MOSFETs and 20-kV SiC IGBTs During Narrow Current Pulsed Conditions

Matthew Kim, JJ Forbes, Emily A Hirsch, James Schrock, Shelby Lacouture, Argenis Bilbao, Stephen Bayne, Heather K O’Brien, Aderinto A Ogunniyi

Research output: Contribution to journalArticlepeer-review

Original languageEnglish
Pages (from-to)3962--3967
JournalIEEE Transactions on Plasma Science
StatePublished - Oct 2020

Fingerprint Dive into the research topics of 'Evaluation of Long-Term Reliability and Overcurrent Capabilities of 15-kV SiC MOSFETs and 20-kV SiC IGBTs During Narrow Current Pulsed Conditions'. Together they form a unique fingerprint.

Cite this