Evaluation of long-term reliability and overcurrent capabilities of 15-kV SiC MOSFETs and 20-kV SiC IGBTs during narrow current pulsed conditions

Matthew Kim, J. J. Forbes, Emily A. Hirsch, James Schrock, Shelby Lacouture, Argenis Bilbao, Stephen B. Bayne, Heather K. O'Brien, Aderinto A. Ogunniyi

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

Silicon carbide (SiC) is becoming a preferred technology of choice for power dense application compared with silicon (Si). A more comprehensive analysis of the long-term pulsed power reliability of SiC is necessary so that the technology can make the transition commercially. In this article, a testbed is utilized to evaluate research grade 15-kV SiC MOSFETs and 20-kV SiC IGBTs manufactured by Wolfspeed, a Cree Company. A testbed was developed here at Texas Tech University (TTU), Lubbock, TX, USA, to test these two devices. The narrow pulse testbed's capacitor bank can be charged up to 10 kV and output square waveform pulse up to 2.0 μ s. The waveform has a full-width at half-maximum pulse and is tested at a repetition pulse rate of three seconds. The electrical characteristics of the forward conduction and reverse breakdown of the device under test (DUT) are measured periodically during the experiment. The DUTs were pulsed at different current levels, up to 340 A (1.06 kA/cm2) for the IGBTs and 74 A (296 A/cm2) for MOSFETs, while the electrical device degradation was monitored. This work discusses the results of the long-term pulsed power reliability, failure modes, and their robustness in overcurrent operations of high-power SiC MOSFETs and IGBTs.

Original languageEnglish
Article number9238402
Pages (from-to)3962-3967
Number of pages6
JournalIEEE Transactions on Plasma Science
Volume48
Issue number11
DOIs
StatePublished - Nov 2020

Keywords

  • Failure modes
  • IGBTs
  • MOSFETs
  • gate oxide failure
  • reliability
  • safe operating area (SOA)
  • silicon carbide (SiC)

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