Evaluation of high-voltage, high-power 4H-SiC insulated-gate bipolar transistors

Miguel Hinojosa, Aderinto Ogunniyi, Heather O'Brien, Stephen Bayne, Charles Scozzie

Research output: Contribution to conference › Paper › peer-review

Original languageEnglish
StatePublished - Dec 2014

Fingerprint Dive into the research topics of 'Evaluation of high-voltage, high-power 4H-SiC insulated-gate bipolar transistors'. Together they form a unique fingerprint.

Cite this