Evaluation of high-voltage, high-power 4H - SiC insulated-gate bipolar transistors

Miguel Hinojosa, Aderinto Ogunniyi, Heather O'Brien, Stephen B. Bayne, Charles Scozzie

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

4 Scopus citations

Abstract

This paper presents preliminary results on the static and dynamic characterization of 12 kV and 20 kV N-channel silicon carbide Insulated-Gate Bipolar Transistors (IGBTs). These state-of-the-art devices were evaluated for their possible use in pulsed-power and energy conversion applications. The 12 kV IGBTs had a chip area of 0.7 cm2 and were rated for 10 A. Their active area was 0.32 cm2, with a drift region of 140 μm and two different field-stop buffers of 5 μm and 2 μm. The 20 kV IGBTs had a chip area of 1 cm2 and were rated for 12 A. Their active area was 0.37 cm2, with a drift region of 180 μm, and their FSB was 2 μm. The switching and conduction losses were calculated for both devices with short pulses and low-inductance resistive loads. Both types of IGBTs displayed promising results for possible replacement of gas switches and Si IGBTs in high voltage applications.

Original languageEnglish
Title of host publicationProceedings of the 2014 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2014
EditorsAllen L. Garner
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages705-708
Number of pages4
ISBN (Electronic)9781467373234
DOIs
StatePublished - Oct 1 2015
EventIEEE International Power Modulator and High Voltage Conference, IPMHVC 2014 - Santa Fe, United States
Duration: Jun 1 2014Jun 5 2014

Publication series

NameProceedings of the 2014 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2014

Conference

ConferenceIEEE International Power Modulator and High Voltage Conference, IPMHVC 2014
CountryUnited States
CitySanta Fe
Period06/1/1406/5/14

Keywords

  • 20kV 4H-SiC
  • High voltage solid state switch
  • IGBT
  • Silicon Carbide (SiC)
  • clamped inductive switching
  • insulated-gate bipolar transistor
  • pulsed testing

Fingerprint Dive into the research topics of 'Evaluation of high-voltage, high-power 4H - SiC insulated-gate bipolar transistors'. Together they form a unique fingerprint.

Cite this