@inproceedings{4068f7d85f074420b7c0d1fe54026660,
title = "Evaluation of high-voltage, high-power 4H - SiC insulated-gate bipolar transistors",
abstract = "This paper presents preliminary results on the static and dynamic characterization of 12 kV and 20 kV N-channel silicon carbide Insulated-Gate Bipolar Transistors (IGBTs). These state-of-the-art devices were evaluated for their possible use in pulsed-power and energy conversion applications. The 12 kV IGBTs had a chip area of 0.7 cm2 and were rated for 10 A. Their active area was 0.32 cm2, with a drift region of 140 μm and two different field-stop buffers of 5 μm and 2 μm. The 20 kV IGBTs had a chip area of 1 cm2 and were rated for 12 A. Their active area was 0.37 cm2, with a drift region of 180 μm, and their FSB was 2 μm. The switching and conduction losses were calculated for both devices with short pulses and low-inductance resistive loads. Both types of IGBTs displayed promising results for possible replacement of gas switches and Si IGBTs in high voltage applications.",
keywords = "20kV 4H-SiC, High voltage solid state switch, IGBT, Silicon Carbide (SiC), clamped inductive switching, insulated-gate bipolar transistor, pulsed testing",
author = "Miguel Hinojosa and Aderinto Ogunniyi and Heather O'Brien and Bayne, {Stephen B.} and Charles Scozzie",
note = "Publisher Copyright: {\textcopyright} 2014 IEEE.; IEEE International Power Modulator and High Voltage Conference, IPMHVC 2014 ; Conference date: 01-06-2014 Through 05-06-2014",
year = "2015",
month = oct,
day = "1",
doi = "10.1109/IPMHVC.2014.7287375",
language = "English",
series = "Proceedings of the 2014 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2014",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "705--708",
editor = "Garner, {Allen L.}",
booktitle = "Proceedings of the 2014 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2014",
}