Evaluation of high power experimental SiC SGTO devices for pulsed power applications

Shelby Lacouture, Kevin Lawson, Stephen Bayne, Michael Giesselmann, Heather O'Brien, Charles J. Scozzie

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

The development of new semiconductor designs requires that extensive testing be completed in order to fully understand the device's characteristics and performance capabilities. This paper describes the evaluation of experimental Silicon Carbide high power Super Gate Turn Off Thyristors (SiC SGTOs) in a unique test bed that is capable of stressing the devices with very high energy/power levels while at the same time mimicking a realistic, real world application for such devices.

Original languageEnglish
Title of host publicationSilicon Carbide and Related Materials 2011, ICSCRM 2011
EditorsRobert P. Devaty, Michael Dudley, T. Paul Chow, Philip G. Neudeck
PublisherTrans Tech Publications Ltd
Pages1183-1186
Number of pages4
ISBN (Print)9783037854198
DOIs
StatePublished - 2012
Event14th International Conference on Silicon Carbide and Related Materials 2011, ICSCRM 2011 - Cleveland, OH, United States
Duration: Sep 11 2011Sep 16 2011

Publication series

NameMaterials Science Forum
Volume717-720
ISSN (Print)0255-5476
ISSN (Electronic)1662-9752

Conference

Conference14th International Conference on Silicon Carbide and Related Materials 2011, ICSCRM 2011
CountryUnited States
CityCleveland, OH
Period09/11/1109/16/11

Keywords

  • Silicon carbide
  • Three phase controlled rectifier
  • Thyristors

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  • Cite this

    Lacouture, S., Lawson, K., Bayne, S., Giesselmann, M., O'Brien, H., & Scozzie, C. J. (2012). Evaluation of high power experimental SiC SGTO devices for pulsed power applications. In R. P. Devaty, M. Dudley, T. P. Chow, & P. G. Neudeck (Eds.), Silicon Carbide and Related Materials 2011, ICSCRM 2011 (pp. 1183-1186). (Materials Science Forum; Vol. 717-720). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/MSF.717-720.1183