@inproceedings{b59fdd4ea72545a69eae84030ea21242,
title = "Evaluation of high power experimental SiC SGTO devices for pulsed power applications",
abstract = "The development of new semiconductor designs requires that extensive testing be completed in order to fully understand the device's characteristics and performance capabilities. This paper describes the evaluation of experimental Silicon Carbide high power Super Gate Turn Off Thyristors (SiC SGTOs) in a unique test bed that is capable of stressing the devices with very high energy/power levels while at the same time mimicking a realistic, real world application for such devices.",
keywords = "Silicon carbide, Three phase controlled rectifier, Thyristors",
author = "Shelby Lacouture and Kevin Lawson and Stephen Bayne and Michael Giesselmann and Heather O'Brien and Scozzie, {Charles J.}",
year = "2012",
doi = "10.4028/www.scientific.net/MSF.717-720.1183",
language = "English",
isbn = "9783037854198",
series = "Materials Science Forum",
publisher = "Trans Tech Publications Ltd",
pages = "1183--1186",
editor = "Devaty, {Robert P.} and Michael Dudley and Chow, {T. Paul} and Neudeck, {Philip G.}",
booktitle = "Silicon Carbide and Related Materials 2011, ICSCRM 2011",
note = "14th International Conference on Silicon Carbide and Related Materials 2011, ICSCRM 2011 ; Conference date: 11-09-2011 Through 16-09-2011",
}