Evaluation of GaN:Fe as a high voltage photoconductive semiconductor switch for pulsed power applications

D. Mauch, J. Dickens, V. Kuryatkov, V. Meyers, R. Ness, S. Nikishin, A. Neuber

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

Semi-insulating Gallium Nitride is evaluated as a candidate material for use as a high voltage photoconductive semiconductor switch (PCSS) for pulsed power applications. The GaN:Fe samples used for this investigation were commercially available, bulk, semi-insulating samples measuring 10 mm × 10 mm × 475 μm. Their optical and crystallographic properties were determined utilizing cathodoluminesence, photoluminescence, RHEED, as well as microwave reflection techniques for carrier lifetime studies. Experimental results are presented elucidating the potential of GaN:Fe sustaining high potential differences in both lateral and vertical geometry devices. For instance, electric field hold-off exceeding 100 kV/cm was observed in lateral geometry with mm sized gaps. In addition, a process for the homo-epitaxial growth of GaN:Si was developed in order to facilitate the fabrication of high quality ohmic contacts. Lastly, experimental results evaluating the on-state performance and photo-current efficiency of a GaN:Fe based PCSS are presented.

Original languageEnglish
Title of host publication2015 IEEE Pulsed Power Conference, PPC 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781479984039
DOIs
StatePublished - Oct 12 2015
EventIEEE Pulsed Power Conference, PPC 2015 - Austin, United States
Duration: May 31 2015Jun 4 2015

Publication series

NameDigest of Technical Papers-IEEE International Pulsed Power Conference
Volume2015-October

Conference

ConferenceIEEE Pulsed Power Conference, PPC 2015
CountryUnited States
CityAustin
Period05/31/1506/4/15

Keywords

  • Gallium nitride
  • Optical switches
  • Prototypes
  • Reflection
  • Substrates
  • Testing

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