Semi-insulating Gallium Nitride is evaluated as a candidate material for use as a high voltage photoconductive semiconductor switch (PCSS) for pulsed power applications. The GaN:Fe samples used for this investigation were commercially available, bulk, semi-insulating samples measuring 10 mm × 10 mm × 475 μm. Their optical and crystallographic properties were determined utilizing cathodoluminesence, photoluminescence, RHEED, as well as microwave reflection techniques for carrier lifetime studies. Experimental results are presented elucidating the potential of GaN:Fe sustaining high potential differences in both lateral and vertical geometry devices. For instance, electric field hold-off exceeding 100 kV/cm was observed in lateral geometry with mm sized gaps. In addition, a process for the homo-epitaxial growth of GaN:Si was developed in order to facilitate the fabrication of high quality ohmic contacts. Lastly, experimental results evaluating the on-state performance and photo-current efficiency of a GaN:Fe based PCSS are presented.