TY - GEN
T1 - Evaluation of experimental silicon SGTO devices for pulsed power applications
AU - Lacouture, Shelby
AU - Bayne, Stephen B.
AU - Giesselmann, Michael G.
AU - Lawson, Kevin
AU - O'Brien, H.
AU - Scozzie, C. J.
N1 - Copyright:
Copyright 2012 Elsevier B.V., All rights reserved.
PY - 2011
Y1 - 2011
N2 - The development of new semiconductor devices requires that extensive testing be completed in order to fully understand the device characteristics and performance capabilities. This paper describes the evaluation of experimental Silicon high power Super Gate Turn Off Thyristors (Si SGTOs) in a unique testing environment. The SGTOs are capable of blocking in the forward direction up to 5kV and are also capable of handling several kA when pulsed. The device structure is asymmetric so the reverse blocking of these devices is only a couple hundred volts. Since these devices are SGTOs special consideration had to be given to the gate trigger circuit so that noise would be minimized on the gate therefore preventing false triggering of the devices.
AB - The development of new semiconductor devices requires that extensive testing be completed in order to fully understand the device characteristics and performance capabilities. This paper describes the evaluation of experimental Silicon high power Super Gate Turn Off Thyristors (Si SGTOs) in a unique testing environment. The SGTOs are capable of blocking in the forward direction up to 5kV and are also capable of handling several kA when pulsed. The device structure is asymmetric so the reverse blocking of these devices is only a couple hundred volts. Since these devices are SGTOs special consideration had to be given to the gate trigger circuit so that noise would be minimized on the gate therefore preventing false triggering of the devices.
UR - http://www.scopus.com/inward/record.url?scp=84861414386&partnerID=8YFLogxK
U2 - 10.1109/PPC.2011.6191511
DO - 10.1109/PPC.2011.6191511
M3 - Conference contribution
AN - SCOPUS:84861414386
SN - 9781457706295
T3 - Digest of Technical Papers-IEEE International Pulsed Power Conference
SP - 782
EP - 785
BT - IEEE Conference Record - PPC 2011, Pulsed Power Conference 2011
Y2 - 19 June 2011 through 23 June 2011
ER -