Evaluation of experimental silicon SGTO devices for pulsed power applications

Shelby Lacouture, Stephen B. Bayne, Michael G. Giesselmann, Kevin Lawson, H. O'Brien, C. J. Scozzie

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

6 Scopus citations

Abstract

The development of new semiconductor devices requires that extensive testing be completed in order to fully understand the device characteristics and performance capabilities. This paper describes the evaluation of experimental Silicon high power Super Gate Turn Off Thyristors (Si SGTOs) in a unique testing environment. The SGTOs are capable of blocking in the forward direction up to 5kV and are also capable of handling several kA when pulsed. The device structure is asymmetric so the reverse blocking of these devices is only a couple hundred volts. Since these devices are SGTOs special consideration had to be given to the gate trigger circuit so that noise would be minimized on the gate therefore preventing false triggering of the devices.

Original languageEnglish
Title of host publicationIEEE Conference Record - PPC 2011, Pulsed Power Conference 2011
Subtitle of host publicationThe 18th IEEE International Pulsed Power Conference
Pages782-785
Number of pages4
DOIs
StatePublished - 2011
Event18th IEEE International Pulsed Power Conference, PPC 2011 - Chicago, IL, United States
Duration: Jun 19 2011Jun 23 2011

Publication series

NameDigest of Technical Papers-IEEE International Pulsed Power Conference

Conference

Conference18th IEEE International Pulsed Power Conference, PPC 2011
CountryUnited States
CityChicago, IL
Period06/19/1106/23/11

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