Evaluation of experimental silicon SGTO devices for pulsed power applications

Shelby Lacouture; Stephen B. Bayne; Michael G. Giesselmann; Kevin Lawson; H. O'Brien; C. J. Scozzie

doi:10.1109/PPC.2011.6191511

Evaluation of experimental silicon SGTO devices for pulsed power applications

Shelby Lacouture, Stephen B. Bayne, Michael G. Giesselmann, Kevin Lawson, H. O'Brien, C. J. Scozzie

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

6 Scopus citations

Abstract

The development of new semiconductor devices requires that extensive testing be completed in order to fully understand the device characteristics and performance capabilities. This paper describes the evaluation of experimental Silicon high power Super Gate Turn Off Thyristors (Si SGTOs) in a unique testing environment. The SGTOs are capable of blocking in the forward direction up to 5kV and are also capable of handling several kA when pulsed. The device structure is asymmetric so the reverse blocking of these devices is only a couple hundred volts. Since these devices are SGTOs special consideration had to be given to the gate trigger circuit so that noise would be minimized on the gate therefore preventing false triggering of the devices.

Original language	English
Title of host publication	IEEE Conference Record - PPC 2011, Pulsed Power Conference 2011
Subtitle of host publication	The 18th IEEE International Pulsed Power Conference
Pages	782-785
Number of pages	4
DOIs	https://doi.org/10.1109/PPC.2011.6191511
State	Published - 2011
Event	18th IEEE International Pulsed Power Conference, PPC 2011 - Chicago, IL, United States Duration: Jun 19 2011 → Jun 23 2011

Publication series

Name	Digest of Technical Papers-IEEE International Pulsed Power Conference

Conference

Conference	18th IEEE International Pulsed Power Conference, PPC 2011
Country	United States
City	Chicago, IL
Period	06/19/11 → 06/23/11

Access to Document

10.1109/PPC.2011.6191511

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Lacouture, S., Bayne, S. B., Giesselmann, M. G., Lawson, K., O'Brien, H., & Scozzie, C. J. (2011). Evaluation of experimental silicon SGTO devices for pulsed power applications. In IEEE Conference Record - PPC 2011, Pulsed Power Conference 2011: The 18th IEEE International Pulsed Power Conference (pp. 782-785). [6191511] (Digest of Technical Papers-IEEE International Pulsed Power Conference). https://doi.org/10.1109/PPC.2011.6191511

Lacouture, Shelby ; Bayne, Stephen B. ; Giesselmann, Michael G. ; Lawson, Kevin ; O'Brien, H. ; Scozzie, C. J. / Evaluation of experimental silicon SGTO devices for pulsed power applications. IEEE Conference Record - PPC 2011, Pulsed Power Conference 2011: The 18th IEEE International Pulsed Power Conference. 2011. pp. 782-785 (Digest of Technical Papers-IEEE International Pulsed Power Conference).

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abstract = "The development of new semiconductor devices requires that extensive testing be completed in order to fully understand the device characteristics and performance capabilities. This paper describes the evaluation of experimental Silicon high power Super Gate Turn Off Thyristors (Si SGTOs) in a unique testing environment. The SGTOs are capable of blocking in the forward direction up to 5kV and are also capable of handling several kA when pulsed. The device structure is asymmetric so the reverse blocking of these devices is only a couple hundred volts. Since these devices are SGTOs special consideration had to be given to the gate trigger circuit so that noise would be minimized on the gate therefore preventing false triggering of the devices.",

author = "Shelby Lacouture and Bayne, {Stephen B.} and Giesselmann, {Michael G.} and Kevin Lawson and H. O'Brien and Scozzie, {C. J.}",

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Lacouture, S, Bayne, SB , Giesselmann, MG, Lawson, K, O'Brien, H & Scozzie, CJ 2011, Evaluation of experimental silicon SGTO devices for pulsed power applications. in IEEE Conference Record - PPC 2011, Pulsed Power Conference 2011: The 18th IEEE International Pulsed Power Conference., 6191511, Digest of Technical Papers-IEEE International Pulsed Power Conference, pp. 782-785, 18th IEEE International Pulsed Power Conference, PPC 2011, Chicago, IL, United States, 06/19/11. https://doi.org/10.1109/PPC.2011.6191511

Evaluation of experimental silicon SGTO devices for pulsed power applications. / Lacouture, Shelby; Bayne, Stephen B.; Giesselmann, Michael G.; Lawson, Kevin; O'Brien, H.; Scozzie, C. J.

IEEE Conference Record - PPC 2011, Pulsed Power Conference 2011: The 18th IEEE International Pulsed Power Conference. 2011. p. 782-785 6191511 (Digest of Technical Papers-IEEE International Pulsed Power Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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Lacouture S, Bayne SB , Giesselmann MG, Lawson K, O'Brien H, Scozzie CJ. Evaluation of experimental silicon SGTO devices for pulsed power applications. In IEEE Conference Record - PPC 2011, Pulsed Power Conference 2011: The 18th IEEE International Pulsed Power Conference. 2011. p. 782-785. 6191511. (Digest of Technical Papers-IEEE International Pulsed Power Conference). https://doi.org/10.1109/PPC.2011.6191511