Evaluation of advanced Si and SiC switching components for army pulsed power applications

Heather O'Brien; William Shaheen; Richard L. Thomas; Timothy Crowley; Stephen B. Bayne; Charles J. Scozzie

doi:10.1109/TMAG.2006.887690

Evaluation of advanced Si and SiC switching components for army pulsed power applications

Heather O'Brien, William Shaheen, Richard L. Thomas, Timothy Crowley, Stephen B. Bayne, Charles J. Scozzie

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

Super gate turn-off thyristors (SGTOs) implemented in both silicon (Si) and silicon carbide (SiC) semiconductors were investigated for high-voltage, high-current pulsed power applications. Modular 80 and 400 kA switches implemented in silicon (2.0-cm² dies) and individual SiC switch die (0.16 cm³) were evaluated. The Si 80- and 400-kA switches were demonstrated (at ambient temperature) to provide rates of current rise (10%-90% peak current) and peak currents (145-μs width) of 24 kA//μs and 92 kA; and 40 kA/μs and 400 kA, respectively. The Si 80-kA switch was repetitively pulsed 1000 times with no significant performance degradation. The SiC switch die were demonstrated to provide specific rate of current rise and current density of 49 kA/μS/cm² and 56.1 k A/cm³, which are at least 2.5 times greater than are possible in silicon pulse switches. The SiC switches were repetitively pulsed at 5 Hz up to 99 000 times without failure and were demonstrated to operate at case temperatures up to 150 °C.

Original language	English
Pages (from-to)	259-264
Number of pages	6
Journal	IEEE Transactions on Magnetics
Volume	43
Issue number	1
DOIs	https://doi.org/10.1109/TMAG.2006.887690
State	Published - Jan 2007

Keywords

Power semiconductor switches
Pulse power system switches
Pulse shaping circuits
Silicon

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10.1109/TMAG.2006.887690

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title = "Evaluation of advanced Si and SiC switching components for army pulsed power applications",

abstract = "Super gate turn-off thyristors (SGTOs) implemented in both silicon (Si) and silicon carbide (SiC) semiconductors were investigated for high-voltage, high-current pulsed power applications. Modular 80 and 400 kA switches implemented in silicon (2.0-cm2 dies) and individual SiC switch die (0.16 cm3) were evaluated. The Si 80- and 400-kA switches were demonstrated (at ambient temperature) to provide rates of current rise (10%-90% peak current) and peak currents (145-μs width) of 24 kA//μs and 92 kA; and 40 kA/μs and 400 kA, respectively. The Si 80-kA switch was repetitively pulsed 1000 times with no significant performance degradation. The SiC switch die were demonstrated to provide specific rate of current rise and current density of 49 kA/μS/cm2 and 56.1 k A/cm3, which are at least 2.5 times greater than are possible in silicon pulse switches. The SiC switches were repetitively pulsed at 5 Hz up to 99 000 times without failure and were demonstrated to operate at case temperatures up to 150 °C.",

keywords = "Power semiconductor switches, Pulse power system switches, Pulse shaping circuits, Silicon",

author = "Heather O'Brien and William Shaheen and Thomas, {Richard L.} and Timothy Crowley and Bayne, {Stephen B.} and Scozzie, {Charles J.}",

note = "Funding Information: This work was supported by the Army Research Laboratory in Adelphi, MD, under a contract. The authors would like to thank V. Chiscop and A. Bard for their help in constructing the testbeds, and B. R. Geil and M. G. Koebke for providing information on and packaging the SiC devices.",

year = "2007",

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doi = "10.1109/TMAG.2006.887690",

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pages = "259--264",

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AU - O'Brien, Heather

AU - Shaheen, William

AU - Thomas, Richard L.

AU - Crowley, Timothy

AU - Bayne, Stephen B.

AU - Scozzie, Charles J.

N1 - Funding Information: This work was supported by the Army Research Laboratory in Adelphi, MD, under a contract. The authors would like to thank V. Chiscop and A. Bard for their help in constructing the testbeds, and B. R. Geil and M. G. Koebke for providing information on and packaging the SiC devices.

PY - 2007/1

Y1 - 2007/1

N2 - Super gate turn-off thyristors (SGTOs) implemented in both silicon (Si) and silicon carbide (SiC) semiconductors were investigated for high-voltage, high-current pulsed power applications. Modular 80 and 400 kA switches implemented in silicon (2.0-cm2 dies) and individual SiC switch die (0.16 cm3) were evaluated. The Si 80- and 400-kA switches were demonstrated (at ambient temperature) to provide rates of current rise (10%-90% peak current) and peak currents (145-μs width) of 24 kA//μs and 92 kA; and 40 kA/μs and 400 kA, respectively. The Si 80-kA switch was repetitively pulsed 1000 times with no significant performance degradation. The SiC switch die were demonstrated to provide specific rate of current rise and current density of 49 kA/μS/cm2 and 56.1 k A/cm3, which are at least 2.5 times greater than are possible in silicon pulse switches. The SiC switches were repetitively pulsed at 5 Hz up to 99 000 times without failure and were demonstrated to operate at case temperatures up to 150 °C.

AB - Super gate turn-off thyristors (SGTOs) implemented in both silicon (Si) and silicon carbide (SiC) semiconductors were investigated for high-voltage, high-current pulsed power applications. Modular 80 and 400 kA switches implemented in silicon (2.0-cm2 dies) and individual SiC switch die (0.16 cm3) were evaluated. The Si 80- and 400-kA switches were demonstrated (at ambient temperature) to provide rates of current rise (10%-90% peak current) and peak currents (145-μs width) of 24 kA//μs and 92 kA; and 40 kA/μs and 400 kA, respectively. The Si 80-kA switch was repetitively pulsed 1000 times with no significant performance degradation. The SiC switch die were demonstrated to provide specific rate of current rise and current density of 49 kA/μS/cm2 and 56.1 k A/cm3, which are at least 2.5 times greater than are possible in silicon pulse switches. The SiC switches were repetitively pulsed at 5 Hz up to 99 000 times without failure and were demonstrated to operate at case temperatures up to 150 °C.

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Evaluation of advanced Si and SiC switching components for army pulsed power applications

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