Evaluation of advanced Si and SiC switching components for army pulsed power applications

Heather O'Brien, William Shaheen, Richard L. Thomas, Timothy Crowley, Stephen B. Bayne, Charles J. Scozzie

Research output: Contribution to journalArticlepeer-review

11 Scopus citations


Super gate turn-off thyristors (SGTOs) implemented in both silicon (Si) and silicon carbide (SiC) semiconductors were investigated for high-voltage, high-current pulsed power applications. Modular 80 and 400 kA switches implemented in silicon (2.0-cm2 dies) and individual SiC switch die (0.16 cm3) were evaluated. The Si 80- and 400-kA switches were demonstrated (at ambient temperature) to provide rates of current rise (10%-90% peak current) and peak currents (145-μs width) of 24 kA//μs and 92 kA; and 40 kA/μs and 400 kA, respectively. The Si 80-kA switch was repetitively pulsed 1000 times with no significant performance degradation. The SiC switch die were demonstrated to provide specific rate of current rise and current density of 49 kA/μS/cm2 and 56.1 k A/cm3, which are at least 2.5 times greater than are possible in silicon pulse switches. The SiC switches were repetitively pulsed at 5 Hz up to 99 000 times without failure and were demonstrated to operate at case temperatures up to 150 °C.

Original languageEnglish
Pages (from-to)259-264
Number of pages6
JournalIEEE Transactions on Magnetics
Issue number1
StatePublished - Jan 2007


  • Power semiconductor switches
  • Pulse power system switches
  • Pulse shaping circuits
  • Silicon


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