TY - JOUR
T1 - Evaluation of a Pulsed Ultraviolet Light-Emitting Diode for Triggering Photoconductive Semiconductor Switches
AU - Mauch, Daniel
AU - Hettler, Cameron
AU - Sullivan, William W.
AU - Neuber, Andreas A.
AU - Dickens, James
N1 - Publisher Copyright:
© 2015 IEEE.
PY - 2015/7/1
Y1 - 2015/7/1
N2 - The power output, forward voltage, conversion efficiency, and spectral characteristics of a 365 nm ultraviolet light-emitting diode (LED) were measured for applications of triggering wide-bandgap photoconductive switches for pulsed power applications. Pulsed currents through the LED ranged from 125 mA up to 2.2 A at widths from 10 μs up to several seconds. Using time-resolved electroluminescence spectroscopy, peak emission was observed to occur at 368.5 nm for short pulses with a red-shift to 371.8 nm for pulses 8 s in duration. A peak light output of 4.1 W was measured for short pulses (<50μs of 2.12 A, corresponding to six times the rated output specification. The LED was used to trigger a high-voltage photoconductive semiconductor switch (PCSS) at voltages up to 6 kV into a high-impedance load. The 365 nm LED is a promising candidate for optical triggering of PCSS devices.
AB - The power output, forward voltage, conversion efficiency, and spectral characteristics of a 365 nm ultraviolet light-emitting diode (LED) were measured for applications of triggering wide-bandgap photoconductive switches for pulsed power applications. Pulsed currents through the LED ranged from 125 mA up to 2.2 A at widths from 10 μs up to several seconds. Using time-resolved electroluminescence spectroscopy, peak emission was observed to occur at 368.5 nm for short pulses with a red-shift to 371.8 nm for pulses 8 s in duration. A peak light output of 4.1 W was measured for short pulses (<50μs of 2.12 A, corresponding to six times the rated output specification. The LED was used to trigger a high-voltage photoconductive semiconductor switch (PCSS) at voltages up to 6 kV into a high-impedance load. The 365 nm LED is a promising candidate for optical triggering of PCSS devices.
KW - Light-emitting diode (LED)
KW - photoconducting devices
KW - photoconductivity
KW - power semiconductor switches
KW - pulsed power
KW - silicon carbide
UR - http://www.scopus.com/inward/record.url?scp=84958034587&partnerID=8YFLogxK
U2 - 10.1109/TPS.2015.2435744
DO - 10.1109/TPS.2015.2435744
M3 - Article
AN - SCOPUS:84958034587
SN - 0093-3813
VL - 43
SP - 2182
EP - 2186
JO - IEEE Transactions on Plasma Science
JF - IEEE Transactions on Plasma Science
IS - 7
M1 - 7151899
ER -