TY - GEN
T1 - Evaluation of a 4 mm x 4 mm SiC GTO at temperatures up to 150 °C and varying pulse width
AU - O'Brien, Heather
AU - Shaheen, William
AU - Bayne, Stephen B.
PY - 2006
Y1 - 2006
N2 - The U. S. Army Research Laboratory (ARL) is evaluating silicon carbide Super GTOs (SGTOs) [1] to determine the extent of silicon carbide's capabilities as a possible replacement for silicon in future pulsed switching applications. Individual SiC die measuring 4 mm x 4 mm were pulsed at high temperatures and varying pulse widths. These SGTOs were switched in an RLC circuit at temperatures up to 150 °C. At this peak temperature, they were switched as high as 3.2 kA and repetitively pulsed at 2.6 kA and 5 Hz for greater than 14,000 pulses. A pulse forming network (PFN) was also designed to increase the pulse width and the action seen by the SiC devices. At ambient temperature and a peak current of 2 kA, SiC SGTOs were switched in the PFN at a 50% pulse width of 40 μs and an action of 150 A2s. This report includes further data on high temperature and wide pulse width testing, as well as analysis of the devices' failure points.
AB - The U. S. Army Research Laboratory (ARL) is evaluating silicon carbide Super GTOs (SGTOs) [1] to determine the extent of silicon carbide's capabilities as a possible replacement for silicon in future pulsed switching applications. Individual SiC die measuring 4 mm x 4 mm were pulsed at high temperatures and varying pulse widths. These SGTOs were switched in an RLC circuit at temperatures up to 150 °C. At this peak temperature, they were switched as high as 3.2 kA and repetitively pulsed at 2.6 kA and 5 Hz for greater than 14,000 pulses. A pulse forming network (PFN) was also designed to increase the pulse width and the action seen by the SiC devices. At ambient temperature and a peak current of 2 kA, SiC SGTOs were switched in the PFN at a 50% pulse width of 40 μs and an action of 150 A2s. This report includes further data on high temperature and wide pulse width testing, as well as analysis of the devices' failure points.
UR - http://www.scopus.com/inward/record.url?scp=48349112693&partnerID=8YFLogxK
U2 - 10.1109/MODSYM.2006.365219
DO - 10.1109/MODSYM.2006.365219
M3 - Conference contribution
AN - SCOPUS:48349112693
SN - 142440018X
SN - 9781424400188
T3 - Conference Record of the International Power Modulator Symposium and High Voltage Workshop
SP - 211
EP - 214
BT - 2006 IEEE International Power Modulator Conference, IPMC(27th Power Modulator Symposium and 2006 High Voltage Workshop)
T2 - 2006 IEEE International Power Modulator Conference, IPMC(27th Power Modulator Symposium and 2006 High Voltage Workshop)
Y2 - 14 May 2006 through 18 May 2006
ER -