Evaluation of a 4 mm x 4 mm SiC GTO at temperatures up to 150 °C and varying pulse width

Heather O'Brien, William Shaheen, Stephen B. Bayne

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

The U. S. Army Research Laboratory (ARL) is evaluating silicon carbide Super GTOs (SGTOs) [1] to determine the extent of silicon carbide's capabilities as a possible replacement for silicon in future pulsed switching applications. Individual SiC die measuring 4 mm x 4 mm were pulsed at high temperatures and varying pulse widths. These SGTOs were switched in an RLC circuit at temperatures up to 150 °C. At this peak temperature, they were switched as high as 3.2 kA and repetitively pulsed at 2.6 kA and 5 Hz for greater than 14,000 pulses. A pulse forming network (PFN) was also designed to increase the pulse width and the action seen by the SiC devices. At ambient temperature and a peak current of 2 kA, SiC SGTOs were switched in the PFN at a 50% pulse width of 40 μs and an action of 150 A2s. This report includes further data on high temperature and wide pulse width testing, as well as analysis of the devices' failure points.

Original languageEnglish
Title of host publication2006 IEEE International Power Modulator Conference, IPMC(27th Power Modulator Symposium and 2006 High Voltage Workshop)
Pages211-214
Number of pages4
DOIs
StatePublished - 2006
Event2006 IEEE International Power Modulator Conference, IPMC(27th Power Modulator Symposium and 2006 High Voltage Workshop) - Washington, DC, United States
Duration: May 14 2006May 18 2006

Publication series

NameConference Record of the International Power Modulator Symposium and High Voltage Workshop
ISSN (Print)1076-8467

Conference

Conference2006 IEEE International Power Modulator Conference, IPMC(27th Power Modulator Symposium and 2006 High Voltage Workshop)
CountryUnited States
CityWashington, DC
Period05/14/0605/18/06

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    O'Brien, H., Shaheen, W., & Bayne, S. B. (2006). Evaluation of a 4 mm x 4 mm SiC GTO at temperatures up to 150 °C and varying pulse width. In 2006 IEEE International Power Modulator Conference, IPMC(27th Power Modulator Symposium and 2006 High Voltage Workshop) (pp. 211-214). [4216171] (Conference Record of the International Power Modulator Symposium and High Voltage Workshop). https://doi.org/10.1109/MODSYM.2006.365219